MUN5215DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Published :

2005

Element Configuration :

Dual

Lifecycle Status :

ACTIVE (Last Updated: 11 hours ago)

Max Power Dissipation :

250mW

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

50V

Min Operating Temperature :

-55°C

Max Frequency :

10kHz

ECCN Code :

EAR99

Voltage - Rated DC :

50V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Operating Supply Voltage :

50V

Terminal Form :

Gull wing

Package / Case :

6-TSSOP, SC-88, SOT-363

Emitter Base Voltage (VEBO) :

6V

REACH SVHC :

No SVHC

Polarity :

NPN

Additional Feature :

BUILT-IN BIAS RESISTOR

Number of Elements :

2

Current Rating :

100mA

Max Collector Current :

100mA

Max Output Current :

100mA

Length :

2.2mm

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

Width :

1.35mm

Pin Count :

6

Resistor - Base (R1) :

10k Ω

Packaging :

Tape and Reel (TR)

Base Part Number :

MUN52**DW1T

Max Operating Temperature :

150°C

Halogen Free :

Halogen Free

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Voltage (VCEO) :

50V

hFE Min :

160

Max Breakdown Voltage :

50V

JESD-609 Code :

e3

Power Dissipation :

256mW

Collector Emitter Breakdown Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

6

Collector Emitter Saturation Voltage :

250mV

Continuous Collector Current :

100mA

Mounting Type :

Surface Mount

Contact Plating :

Tin

Transistor Type :

2 NPN - Pre-Biased (Dual)

Height :

1mm

Factory Lead Time :

8 Weeks