MUN5215DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Published :

2005

ECCN Code :

EAR99

JESD-609 Code :

e3

Max Power Dissipation :

250mW

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

hFE Min :

160

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Max Frequency :

10kHz

Package / Case :

6-TSSOP, SC-88, SOT-363

Continuous Collector Current :

100mA

Current Rating :

100mA

RoHS Status :

ROHS3 Compliant

Pin Count :

6

Transistor Application :

SWITCHING

Collector Base Voltage (VCBO) :

50V

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Saturation Voltage :

250mV

Polarity :

NPN

REACH SVHC :

No SVHC

Max Output Current :

100mA

Length :

2.2mm

Resistor - Base (R1) :

10k Ω

Halogen Free :

Halogen Free

Collector Emitter Breakdown Voltage :

50V

Operating Supply Voltage :

50V

Lead Free :

Lead Free

Number of Terminations :

6

Number of Pins :

6

Width :

1.35mm

Terminal Form :

Gull wing

Contact Plating :

Tin

Max Operating Temperature :

150°C

Element Configuration :

Dual

Collector Emitter Voltage (VCEO) :

50V

Max Breakdown Voltage :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Factory Lead Time :

8 Weeks

Min Operating Temperature :

-55°C

Max Collector Current :

100mA

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

50V

Number of Elements :

2

Additional Feature :

BUILT-IN BIAS RESISTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Surface Mount :

yes

Power Dissipation :

256mW

Time@Peak Reflow Temperature-Max (s) :

40

Height :

1mm

Base Part Number :

MUN52**DW1T

Emitter Base Voltage (VEBO) :

6V

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 11 hours ago)

Transistor Type :

2 NPN - Pre-Biased (Dual)