MUN5213DW1T3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Collector Current :

100mA

Halogen Free :

Halogen Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Number of Pins :

6

Pbfree Code :

yes

Number of Elements :

2

Transistor Type :

2 NPN - Pre-Biased (Dual)

Terminal Finish :

Tin (Sn)

hFE Min :

80

Current - Collector Cutoff (Max) :

500nA

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

50V

JESD-609 Code :

e3

Min Operating Temperature :

-55°C

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Surface Mount :

yes

Terminal Form :

Gull wing

Published :

2012

Element Configuration :

Dual

Package / Case :

6-TSSOP, SC-88, SOT-363

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity :

NPN

Max Power Dissipation :

250mW

Resistor - Base (R1) :

47k Ω

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Power Dissipation :

256mW

Resistor - Emitter Base (R2) :

47k Ω

Base Part Number :

MUN52**DW1T

Number of Terminations :

6

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

Factory Lead Time :

8 Weeks

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Pin Count :

6

Collector Emitter Voltage (VCEO) :

50V

Mounting Type :

Surface Mount