MUN5212DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Power Dissipation :

187mW

Halogen Free :

Halogen Free

hFE Min :

60

Max Breakdown Voltage :

50V

Base Part Number :

MUN52**DW1T

Number of Terminations :

6

Published :

2005

Voltage - Rated DC :

50V

ECCN Code :

EAR99

Current Rating :

100mA

Package / Case :

6-TSSOP, SC-88, SOT-363

Contact Plating :

Tin

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Continuous Collector Current :

100mA

Transistor Type :

2 NPN - Pre-Biased (Dual)

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Pin Count :

6

Max Operating Temperature :

150°C

Number of Pins :

6

Polarity :

NPN

Resistor - Base (R1) :

22k Ω

Pbfree Code :

yes

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

50V

Min Operating Temperature :

-55°C

Element Configuration :

Dual

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V

Factory Lead Time :

8 Weeks

Current - Collector Cutoff (Max) :

500nA

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Radiation Hardening :

No

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Max Collector Current :

100mA

Max Power Dissipation :

250mW

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Collector Emitter Breakdown Voltage :

50V

Number of Elements :

2

Resistor - Emitter Base (R2) :

22k Ω

REACH SVHC :

No SVHC