MUN5212DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Resistor - Base (R1) :

22k Ω

Halogen Free :

Halogen Free

Package / Case :

6-TSSOP, SC-88, SOT-363

Mounting Type :

Surface Mount

Factory Lead Time :

8 Weeks

Continuous Collector Current :

100mA

Published :

2005

Current - Collector Cutoff (Max) :

500nA

Number of Elements :

2

Collector Emitter Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

50V

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Number of Pins :

6

Surface Mount :

yes

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Power Dissipation :

187mW

Max Collector Current :

100mA

Max Power Dissipation :

250mW

Max Breakdown Voltage :

50V

Pin Count :

6

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Base Part Number :

MUN52**DW1T

Min Operating Temperature :

-55°C

Radiation Hardening :

No

Polarity :

NPN

Lead Free :

Lead Free

Transistor Type :

2 NPN - Pre-Biased (Dual)

Current Rating :

100mA

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

ECCN Code :

EAR99

Terminal Form :

Gull wing

Pbfree Code :

yes

Number of Terminations :

6

REACH SVHC :

No SVHC

Max Operating Temperature :

150°C

Time@Peak Reflow Temperature-Max (s) :

40

Resistor - Emitter Base (R2) :

22k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V

Element Configuration :

Dual

hFE Min :

60

Voltage - Rated DC :

50V

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3