MUN5211DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Power Dissipation :

187mW

Resistor - Emitter Base (R2) :

10k Ω

Package / Case :

6-TSSOP, SC-88, SOT-363

Max Operating Temperature :

150°C

Terminal Form :

Gull wing

Height :

900μm

Min Operating Temperature :

-55°C

Max Collector Current :

100mA

Pbfree Code :

yes

Transistor Type :

2 NPN - Pre-Biased (Dual)

Resistor - Base (R1) :

10k Ω

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Current Rating :

100mA

Polarity :

NPN

Max Breakdown Voltage :

50V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

hFE Min :

35

Base Part Number :

MUN52**DW1T

Radiation Hardening :

No

Number of Elements :

2

REACH SVHC :

No SVHC

Width :

1.25mm

Collector Emitter Saturation Voltage :

250mV

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Factory Lead Time :

8 Weeks

Continuous Collector Current :

100mA

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Voltage (VCEO) :

50V

Operating Supply Voltage :

50V

Packaging :

Cut Tape (CT)

Halogen Free :

Halogen Free

Published :

2005

Number of Terminations :

6

Voltage - Rated DC :

50V

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Contact Plating :

Tin

Max Output Current :

100mA

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Length :

2mm

Element Configuration :

Dual

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

Pin Count :

6

Max Power Dissipation :

250mW

Collector Emitter Breakdown Voltage :

50V

RoHS Status :

ROHS3 Compliant