MUN5211DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Terminal Form :

Gull wing

Max Power Dissipation :

250mW

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

500nA

Base Part Number :

MUN52**DW1T

Package / Case :

6-TSSOP, SC-88, SOT-363

Element Configuration :

Dual

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Collector Emitter Saturation Voltage :

250mV

Contact Plating :

Tin

Collector Emitter Breakdown Voltage :

50V

Max Output Current :

100mA

Pin Count :

6

Resistor - Emitter Base (R2) :

10k Ω

Width :

1.25mm

Voltage - Rated DC :

50V

Number of Terminations :

6

Pbfree Code :

yes

JESD-609 Code :

e3

Radiation Hardening :

No

Published :

2005

Peak Reflow Temperature (Cel) :

260

Halogen Free :

Halogen Free

Min Operating Temperature :

-55°C

Length :

2mm

Max Operating Temperature :

150°C

Max Collector Current :

100mA

Number of Elements :

2

hFE Min :

35

Collector Emitter Voltage (VCEO) :

50V

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Current Rating :

100mA

Mounting Type :

Surface Mount

Polarity :

NPN

Factory Lead Time :

8 Weeks

Resistor - Base (R1) :

10k Ω

Number of Pins :

6

Operating Supply Voltage :

50V

Lead Free :

Lead Free

Packaging :

Cut Tape (CT)

Surface Mount :

yes

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Transistor Type :

2 NPN - Pre-Biased (Dual)

Power Dissipation :

187mW

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Collector Current :

100mA

Max Breakdown Voltage :

50V

Height :

900μm

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant