MUN5137DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Min Operating Temperature :

-55°C

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Max Power Dissipation :

250mW

Surface Mount :

yes

Continuous Collector Current :

-100mA

Pbfree Code :

yes

RoHS Status :

RoHS Compliant

Polarity :

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Collector Emitter Breakdown Voltage :

50V

Number of Terminations :

6

ECCN Code :

EAR99

Current Rating :

-100mA

Collector Emitter Voltage (VCEO) :

50V

Factory Lead Time :

10 Weeks

Transistor Application :

SWITCHING

Base Part Number :

MUN51**DW1T

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Terminal Finish :

Tin (Sn)

Resistor - Emitter Base (R2) :

22k Ω

Package / Case :

6-TSSOP, SC-88, SOT-363

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

Radiation Hardening :

No

Published :

2012

Lead Free :

Lead Free

Pin Count :

6

hFE Min :

80

Halogen Free :

Halogen Free

Resistor - Base (R1) :

47k Ω

Max Collector Current :

100mA

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Element Configuration :

Dual

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

Transistor Type :

2 PNP - Pre-Biased (Dual)

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 2.15

Current - Collector Cutoff (Max) :

500nA

Power Dissipation :

250mW

Terminal Form :

Gull wing

Voltage - Rated DC :

-50V