MUN5137DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Resistor - Base (R1) :

47k Ω

Peak Reflow Temperature (Cel) :

240

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Collector Current :

-100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

Current Rating :

-100mA

Current - Collector Cutoff (Max) :

500nA

Element Configuration :

Dual

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Base Part Number :

MUN51**DW1T

Max Power Dissipation :

250mW

JESD-30 Code :

R-PDSO-G6

Collector Emitter Voltage (VCEO) :

250mV

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 0.47

Resistor - Emitter Base (R2) :

22k Ω

Mount :

Surface Mount

Terminal Finish :

Tin/Lead (Sn/Pb)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Reach Compliance Code :

not_compliant

Pin Count :

6

Package / Case :

6-TSSOP, SC-88, SOT-363

Lead Free :

Contains Lead

Transistor Type :

2 PNP - Pre-Biased (Dual)

Power Dissipation :

250mW

Number of Terminations :

6

Max Collector Current :

100mA

JESD-609 Code :

e0

Collector Emitter Breakdown Voltage :

50V

Number of Elements :

2

Polarity :

PNP

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Published :

2009

RoHS Status :

Non-RoHS Compliant

Voltage - Rated DC :

-50V