MUN5137DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Power Dissipation :

250mW

Packaging :

Tape and Reel (TR)

Max Operating Temperature :

150°C

Current Rating :

-100mA

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 0.47

Published :

2009

Min Operating Temperature :

-55°C

JESD-30 Code :

R-PDSO-G6

Terminal Finish :

Tin/Lead (Sn/Pb)

Qualification Status :

Not Qualified

Element Configuration :

Dual

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Base Part Number :

MUN51**DW1T

JESD-609 Code :

e0

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Max Power Dissipation :

250mW

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Resistor - Emitter Base (R2) :

22k Ω

Transistor Type :

2 PNP - Pre-Biased (Dual)

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

Max Collector Current :

100mA

Collector Emitter Breakdown Voltage :

50V

Mount :

Surface Mount

Lead Free :

Contains Lead

Polarity :

PNP

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Collector Current :

-100mA

Number of Terminations :

6

Voltage - Rated DC :

-50V

Collector Emitter Voltage (VCEO) :

250mV

Current - Collector Cutoff (Max) :

500nA

Package / Case :

6-TSSOP, SC-88, SOT-363

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

240

Resistor - Base (R1) :

47k Ω