MUN5136DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Lifecycle Status :

ACTIVE (Last Updated: 2 weeks ago)

Resistor - Base (R1) :

100k Ω

Radiation Hardening :

No

Transistor Type :

2 PNP - Pre-Biased (Dual)

Packaging :

Tape and Reel (TR)

Published :

2014

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Number of Terminations :

6

Max Power Dissipation :

250mW

Surface Mount :

yes

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

50V

Number of Elements :

2

Min Operating Temperature :

-55°C

Terminal Finish :

Tin (Sn)

Collector Emitter Voltage (VCEO) :

50V

Polarity :

PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Continuous Collector Current :

-100mA

Mounting Type :

Surface Mount

Length :

2mm

Lead Free :

Lead Free

Pin Count :

6

Max Operating Temperature :

150°C

Width :

1.25mm

Height :

900μm

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Element Configuration :

Dual

Factory Lead Time :

8 Weeks

Terminal Form :

Gull wing

Halogen Free :

Halogen Free

Number of Pins :

6

JESD-609 Code :

e3

ECCN Code :

EAR99

Resistor - Emitter Base (R2) :

100k Ω

Max Collector Current :

100mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Package / Case :

6-TSSOP, SC-88, SOT-363

hFE Min :

80

Current - Collector Cutoff (Max) :

500nA