MUN5136DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Package / Case :

6-TSSOP, SC-88, SOT-363

Transistor Type :

2 PNP - Pre-Biased (Dual)

Element Configuration :

Dual

Number of Terminations :

6

Halogen Free :

Halogen Free

Collector Emitter Breakdown Voltage :

50V

Radiation Hardening :

No

hFE Min :

80

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Terminal Finish :

Tin (Sn)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Resistor - Emitter Base (R2) :

100k Ω

Factory Lead Time :

8 Weeks

Min Operating Temperature :

-55°C

ECCN Code :

EAR99

Max Collector Current :

100mA

Published :

2014

Max Power Dissipation :

250mW

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Voltage (VCEO) :

50V

Pin Count :

6

Continuous Collector Current :

-100mA

Number of Pins :

6

Polarity :

PNP

Max Operating Temperature :

150°C

Length :

2mm

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Surface Mount :

yes

Lifecycle Status :

ACTIVE (Last Updated: 2 weeks ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

500nA

Resistor - Base (R1) :

100k Ω

Number of Elements :

2

Height :

900μm

Pbfree Code :

yes

Width :

1.25mm

JESD-609 Code :

e3