MUN5135DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Breakdown Voltage :

50V

Element Configuration :

Dual

Transistor Type :

2 PNP - Pre-Biased (Dual)

hFE Min :

80

Transistor Application :

SWITCHING

Pin Count :

6

Power Dissipation :

250mW

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Breakdown Voltage :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Number of Pins :

6

Continuous Collector Current :

-100mA

JESD-609 Code :

e3

Terminal Form :

Gull wing

Factory Lead Time :

8 Weeks

Surface Mount :

yes

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

Voltage - Rated DC :

-50V

Number of Terminations :

6

Resistor - Emitter Base (R2) :

47k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 0.047

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Published :

2007

ECCN Code :

EAR99

Number of Elements :

2

Halogen Free :

Halogen Free

Lead Free :

Lead Free

Base Part Number :

MUN51**DW1T

Max Power Dissipation :

250mW

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

500nA

Peak Reflow Temperature (Cel) :

260

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Current Rating :

-100mA

Radiation Hardening :

No

Mounting Type :

Surface Mount

Resistor - Base (R1) :

2.2k Ω

Package / Case :

6-TSSOP, SC-88, SOT-363

Max Collector Current :

100mA

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

50V

Polarity :

PNP

Terminal Finish :

Tin (Sn)