MUN5134DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Collector Emitter Breakdown Voltage :

50V

Surface Mount :

yes

Polarity :

PNP

Element Configuration :

Dual

Continuous Collector Current :

-100mA

Resistor - Base (R1) :

22k Ω

Max Power Dissipation :

250mW

Voltage - Rated DC :

-50V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Pbfree Code :

yes

ECCN Code :

EAR99

Min Operating Temperature :

-55°C

Resistor - Emitter Base (R2) :

47k Ω

hFE Min :

80

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

JESD-609 Code :

e3

Number of Terminations :

6

Halogen Free :

Halogen Free

Current - Collector Cutoff (Max) :

500nA

Max Collector Current :

100mA

Factory Lead Time :

30 Weeks

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 0.47

Base Part Number :

MUN51**DW1T

Collector Emitter Voltage (VCEO) :

250mV

Pin Count :

6

Power Dissipation :

250mW

Terminal Form :

Gull wing

Transistor Type :

2 PNP - Pre-Biased (Dual)

Number of Pins :

6

Number of Elements :

2

Published :

2010

Transistor Application :

SWITCHING

Max Operating Temperature :

150°C

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Package / Case :

6-TSSOP, SC-88, SOT-363

RoHS Status :

RoHS Compliant

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

Current Rating :

-100mA

Terminal Finish :

Tin (Sn)