MUN5133DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Operating Temperature :

150°C

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Terminal Form :

Gull wing

Continuous Collector Current :

-100mA

Number of Pins :

6

Current Rating :

-100mA

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

250mW

Pin Count :

6

Min Operating Temperature :

-55°C

Mounting Type :

Surface Mount

Halogen Free :

Halogen Free

Power Dissipation :

250mW

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 0.12

Element Configuration :

Dual

Number of Terminations :

6

Max Collector Current :

100mA

Resistor - Base (R1) :

4.7k Ω

hFE Min :

80

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Current - Collector Cutoff (Max) :

500nA

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Transistor Type :

2 PNP - Pre-Biased (Dual)

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Factory Lead Time :

2 Weeks

Base Part Number :

MUN51**DW1T

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Polarity :

PNP

Resistor - Emitter Base (R2) :

47k Ω

Package / Case :

6-TSSOP, SC-88, SOT-363

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

50V

Voltage - Rated DC :

-50V

Collector Emitter Breakdown Voltage :

50V

Published :

2009