MUN5132DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 5mA 10V

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

hFE Min :

15

Lead Free :

Lead Free

Pbfree Code :

yes

Element Configuration :

Dual

Published :

2012

Transistor Type :

2 PNP - Pre-Biased (Dual)

Power Dissipation :

250mW

Max Power Dissipation :

250mW

Collector Emitter Voltage (VCEO) :

50V

Max Collector Current :

100mA

Terminal Finish :

Tin (Sn)

Halogen Free :

Halogen Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

6-TSSOP, SC-88, SOT-363

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

JESD-609 Code :

e3

Terminal Form :

Gull wing

Resistor - Base (R1) :

4.7k Ω

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Continuous Collector Current :

-100mA

Transistor Application :

SWITCHING

Number of Terminations :

6

Surface Mount :

yes

Polarity :

PNP

Factory Lead Time :

8 Weeks

Collector Emitter Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

500nA

Peak Reflow Temperature (Cel) :

260

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Min Operating Temperature :

-55°C

Number of Elements :

2

Resistor - Emitter Base (R2) :

4.7k Ω

Time@Peak Reflow Temperature-Max (s) :

40

Max Operating Temperature :

150°C