MUN5130DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Collector Current :

100mA

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Max Operating Temperature :

150°C

Published :

2009

Pin Count :

6

Number of Terminations :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

3 @ 5mA 10V

Surface Mount :

yes

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Polarity :

PNP

Transistor Type :

2 PNP - Pre-Biased (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Base Part Number :

MUN51**DW1T

Halogen Free :

Halogen Free

Resistor - Emitter Base (R2) :

1k Ω

RoHS Status :

RoHS Compliant

Element Configuration :

Dual

Terminal Finish :

Tin (Sn)

Resistor - Base (R1) :

1k Ω

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

-50V

Collector Emitter Voltage (VCEO) :

50V

Current Rating :

-100mA

Number of Elements :

2

Mounting Type :

Surface Mount

Factory Lead Time :

30 Weeks

Power Dissipation :

250mW

Collector Emitter Breakdown Voltage :

50V

Min Operating Temperature :

-55°C

hFE Min :

3

Max Power Dissipation :

250mW

Transistor Application :

SWITCHING

Package / Case :

6-TSSOP, SC-88, SOT-363

Current - Collector Cutoff (Max) :

500nA

Continuous Collector Current :

-100mA

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

ECCN Code :

EAR99

Number of Pins :

6