MPSH81_D27Z

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Collector Base Voltage (VCBO) :

20V

Mount :

Through Hole

Emitter Base Voltage (VEBO) :

3V

Max Power Dissipation :

350mW

Max Collector Current :

50mA

Transistor Type :

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V

RoHS Status :

RoHS Compliant

Collector Emitter Breakdown Voltage :

20V

Number of Pins :

3

Mounting Type :

Through Hole

hFE Min :

60

Power Dissipation :

350mW

Current Rating :

50mA

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Base Part Number :

MPSH81

Gain Bandwidth Product :

600MHz

Voltage - Rated DC :

20V

Continuous Collector Current :

50mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

20V

Frequency :

600MHz