MPSH10RLRA

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Max Power Dissipation :

350mW

HTS Code :

8541.21.00.75

Transition Frequency :

650MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Collector Emitter Saturation Voltage :

500mV

Number of Terminations :

3

JESD-609 Code :

e0

Pin Count :

3

Lead Free :

Contains Lead

Terminal Form :

THROUGH-HOLE

RoHS Status :

Non-RoHS Compliant

Emitter Base Voltage (VEBO) :

3V

Qualification Status :

Not Qualified

Terminal Finish :

Tin/Lead (Sn/Pb)

Number of Elements :

1

Terminal Position :

BOTTOM

Collector Emitter Breakdown Voltage :

25V

Gain Bandwidth Product :

650MHz

Voltage - Rated DC :

25V

Collector Base Voltage (VCBO) :

30V

DC Current Gain-Min (hFE) :

60

Polarity :

NPN

Collector Current-Max (IC) :

0.1A

Peak Reflow Temperature (Cel) :

240

Transistor Application :

AMPLIFIER

ECCN Code :

EAR99

Max Operating Temperature :

150°C

hFE Min :

60

Current Rating :

4mA

Package / Case :

TO-92-3

Reach Compliance Code :

not_compliant

Min Operating Temperature :

-55°C

Collector Emitter Voltage (VCEO) :

25V

Published :

1996

Number of Pins :

3

Surface Mount :

No

Packaging :

Cut Tape (CT)

Collector-Base Capacitance-Max :

0.7pF