MPSH10RLRAG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Collector Current-Max (IC) :

0.1A

Collector Emitter Voltage (VCEO) :

25V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

ECCN Code :

EAR99

Power - Max :

350mW

Current Rating :

4mA

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Collector-Base Capacitance-Max :

0.7pF

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

NPN

Max Power Dissipation :

350mW

hFE Min :

60

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Number of Elements :

1

Published :

2007

Terminal Position :

BOTTOM

Collector Emitter Breakdown Voltage :

25V

Collector Base Voltage (VCBO) :

30V

Gain Bandwidth Product :

650MHz

Transistor Element Material :

SILICON

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Voltage - Rated DC :

25V

Emitter Base Voltage (VEBO) :

3V

JESD-609 Code :

e1

Number of Pins :

3

Base Part Number :

MPSH10

HTS Code :

8541.21.00.75

Collector Emitter Saturation Voltage :

500mV

Number of Terminations :

3

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

Mounting Type :

Through Hole

Element Configuration :

Single

Transition Frequency :

650MHz

Transistor Application :

AMPLIFIER

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Transistor Type :

NPN

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)