MPSH10RLRPG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Power - Max :

350mW

Surface Mount :

No

Lead Free :

Lead Free

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 23 hours ago)

Base Part Number :

MPSH10

Collector Emitter Breakdown Voltage :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

25V

Power Dissipation :

350W

hFE Min :

60

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Saturation Voltage :

500mV

Transistor Type :

NPN

Number of Terminations :

3

Number of Elements :

1

JESD-609 Code :

e1

Mounting Type :

Through Hole

Pbfree Code :

yes

RoHS Status :

RoHS Compliant

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

350W

Gain Bandwidth Product :

650MHz

Frequency :

650MHz

Voltage - Rated DC :

25V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Collector Base Voltage (VCBO) :

30V

Transistor Element Material :

SILICON

Packaging :

Tape and Box (TB)

Transition Frequency :

650MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Collector-Base Capacitance-Max :

0.7pF

Number of Pins :

3

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Polarity/Channel Type :

NPN

Operating Temperature :

-55°C~150°C TJ

Published :

2007

Current Rating :

4mA

Terminal Position :

BOTTOM

Emitter Base Voltage (VEBO) :

3V

Radiation Hardening :

No

Pin Count :

3

ECCN Code :

EAR99

Transistor Application :

AMPLIFIER