MPSH10G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Collector Emitter Saturation Voltage :

500mV

Mounting Type :

Through Hole

Width :

4.191mm

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Collector-Base Capacitance-Max :

0.7pF

Published :

2006

Surface Mount :

No

Height :

5.334mm

hFE Min :

60

Current Rating :

4mA

Collector Emitter Voltage (VCEO) :

25V

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Packaging :

Bulk

Power - Max :

350mW

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

3V

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

25V

Max Power Dissipation :

350W

Length :

5.1816mm

Number of Terminations :

3

Gain Bandwidth Product :

650MHz

Pin Count :

3

Transistor Element Material :

SILICON

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Power Dissipation :

350W

Number of Elements :

1

Transistor Application :

AMPLIFIER

Pbfree Code :

yes

Transistor Type :

NPN

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

JESD-609 Code :

e1

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Collector Base Voltage (VCBO) :

30V

Base Part Number :

MPSH10

Voltage - Rated DC :

25V

Polarity/Channel Type :

NPN

Transition Frequency :

650MHz

Frequency :

650MHz

Terminal Position :

BOTTOM

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3