MPSH10G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Position :

BOTTOM

Collector Emitter Saturation Voltage :

500mV

Transistor Type :

NPN

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

25V

Width :

4.191mm

Voltage - Rated DC :

25V

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Pbfree Code :

yes

Gain Bandwidth Product :

650MHz

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Packaging :

Bulk

Transistor Application :

AMPLIFIER

Collector-Base Capacitance-Max :

0.7pF

Current Rating :

4mA

Number of Terminations :

3

Emitter Base Voltage (VEBO) :

3V

Element Configuration :

Single

Frequency :

650MHz

Polarity/Channel Type :

NPN

Mounting Type :

Through Hole

Power Dissipation :

350W

Collector Base Voltage (VCBO) :

30V

Number of Elements :

1

Height :

5.334mm

hFE Min :

60

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Element Material :

SILICON

Base Part Number :

MPSH10

Lead Free :

Lead Free

JESD-609 Code :

e1

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Power - Max :

350mW

Max Power Dissipation :

350W

Pin Count :

3

Published :

2006

Operating Temperature :

-55°C~150°C TJ

Length :

5.1816mm

Collector Emitter Breakdown Voltage :

25V

Transition Frequency :

650MHz

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Surface Mount :

No

RoHS Status :

RoHS Compliant