MPSH10G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Type :

NPN

Published :

2006

JESD-609 Code :

e1

Element Configuration :

Single

Transistor Element Material :

SILICON

Transistor Application :

AMPLIFIER

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

ECCN Code :

EAR99

Height :

5.334mm

Collector-Base Capacitance-Max :

0.7pF

Pin Count :

3

Frequency :

650MHz

Length :

5.1816mm

Power - Max :

350mW

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

25V

Current Rating :

4mA

Pbfree Code :

yes

Voltage - Rated DC :

25V

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

3V

Packaging :

Bulk

Collector Emitter Saturation Voltage :

500mV

Polarity/Channel Type :

NPN

Number of Terminations :

3

Number of Elements :

1

Transition Frequency :

650MHz

Terminal Position :

BOTTOM

Surface Mount :

No

Width :

4.191mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Mounting Type :

Through Hole

Max Power Dissipation :

350W

Base Part Number :

MPSH10

Number of Pins :

3

hFE Min :

60

Operating Temperature :

-55°C~150°C TJ

Collector Base Voltage (VCBO) :

30V

Power Dissipation :

350W

Gain Bandwidth Product :

650MHz

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Voltage (VCEO) :

25V

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

RoHS Status :

RoHS Compliant

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)