MPSH10

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Mfr.Part #
MPSH10
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
RF TRANS NPN 25V 650MHZ
Stock
946
In Stock :
946

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - RF
JESD-609 Code :
e1
Operating Temperature :
-55°C~150°C TJ
Transistor Element Material :
SILICON
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 2 days ago)
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 4mA 10V
Emitter Base Voltage (VEBO) :
3V
Current Rating :
4mA
Radiation Hardening :
No
Collector Base Voltage (VCBO) :
30V
Number of Elements :
1
Power Dissipation :
350W
Number of Terminations :
3
Pin Count :
3
hFE Min :
60
Surface Mount :
No
Frequency :
650MHz
Number of Pins :
3
Pbfree Code :
yes
Collector Emitter Breakdown Voltage :
25V
RoHS Status :
RoHS Compliant
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Lead Free :
Lead Free
Power - Max :
350mW
Terminal Position :
BOTTOM
Polarity/Channel Type :
NPN
Transition Frequency :
650MHz
Collector-Base Capacitance-Max :
0.7pF
Max Power Dissipation :
350W
Base Part Number :
MPSH10
Peak Reflow Temperature (Cel) :
260
Transistor Type :
NPN
Width :
4.191mm
ECCN Code :
EAR99
Published :
2006
Mounting Type :
Through Hole
Collector Emitter Saturation Voltage :
500mV
Voltage - Rated DC :
25V
Height :
5.334mm
Length :
5.1816mm
Collector Emitter Voltage (VCEO) :
25V
Gain Bandwidth Product :
650MHz
Time@Peak Reflow Temperature-Max (s) :
40
Transistor Application :
AMPLIFIER
Packaging :
Bulk
Introducing Transistors - Bipolar (BJT) - RF NTE Electronics, Inc. MPSH10 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Pins:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Base Part Number:MPSH10, Mounting Type:Through Hole, MPSH10 pinout, MPSH10 datasheet PDF, MPSH10 amp .Beyond Transistors - Bipolar (BJT) - RF NTE Electronics, Inc. MPSH10 ,we also offer BFP196WH6327XTSA1, BFR193E6327HTSA1, BFR360FH6327XTSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. MPSH10


MPSH10G datasheet pdf and Transistors - Bipolar (BJT) - RF product details from ON Semiconductor stock available at

The ON Semiconductor MPSH10G is a NPN Bipolar Junction Transistor (BJT) designed for use in RF applications. It has a maximum collector-emitter voltage of 25V and is packaged in a 3-pin TO-92 box.

Features of the MPSH10G include a high current gain of up to 500, a low noise figure of 1.5dB, and a low collector-emitter saturation voltage of 0.2V. It also has a high frequency response of up to 500MHz and a low capacitance of 1.5pF.

The MPSH10G is suitable for use in a variety of RF applications, such as amplifiers, oscillators, and mixers. It can also be used in switching applications, such as in power supplies and motor control circuits.
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