MPSH10

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Mfr.Part #
MPSH10
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
RF TRANS NPN 25V 650MHZ
Stock
946
In Stock :
946

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - RF
Power - Max :
350mW
Transistor Element Material :
SILICON
Base Part Number :
MPSH10
hFE Min :
60
Time@Peak Reflow Temperature-Max (s) :
40
Transistor Type :
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 4mA 10V
Gain Bandwidth Product :
650MHz
Pbfree Code :
yes
Collector Emitter Saturation Voltage :
500mV
Collector Emitter Breakdown Voltage :
25V
Width :
4.191mm
Packaging :
Bulk
JESD-609 Code :
e1
Number of Terminations :
3
Transistor Application :
AMPLIFIER
Collector Emitter Voltage (VCEO) :
25V
Frequency :
650MHz
Lead Free :
Lead Free
Terminal Position :
BOTTOM
Collector Base Voltage (VCBO) :
30V
Polarity/Channel Type :
NPN
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature :
-55°C~150°C TJ
Transition Frequency :
650MHz
ECCN Code :
EAR99
Height :
5.334mm
Collector-Base Capacitance-Max :
0.7pF
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Number of Elements :
1
Pin Count :
3
Emitter Base Voltage (VEBO) :
3V
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 2 days ago)
Element Configuration :
Single
Number of Pins :
3
Power Dissipation :
350W
Current Rating :
4mA
Length :
5.1816mm
Max Power Dissipation :
350W
RoHS Status :
RoHS Compliant
Surface Mount :
No
Mounting Type :
Through Hole
Peak Reflow Temperature (Cel) :
260
Published :
2006
Voltage - Rated DC :
25V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Radiation Hardening :
No
Datasheets
MPSH10
Introducing Transistors - Bipolar (BJT) - RF NTE Electronics, Inc. MPSH10 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MPSH10, Number of Terminations:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, MPSH10 pinout, MPSH10 datasheet PDF, MPSH10 amp .Beyond Transistors - Bipolar (BJT) - RF NTE Electronics, Inc. MPSH10 ,we also offer BFP196WH6327XTSA1, BFR193E6327HTSA1, BFR360FH6327XTSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. MPSH10


MPSH10G datasheet pdf and Transistors - Bipolar (BJT) - RF product details from ON Semiconductor stock available at

The ON Semiconductor MPSH10G is a NPN Bipolar Junction Transistor (BJT) designed for use in RF applications. It has a maximum collector-emitter voltage of 25V and is packaged in a 3-pin TO-92 box.

Features of the MPSH10G include a high current gain of up to 500, a low noise figure of 1.5dB, and a low collector-emitter saturation voltage of 0.2V. It also has a high frequency response of up to 500MHz and a low capacitance of 1.5pF.

The MPSH10G is suitable for use in a variety of RF applications, such as amplifiers, oscillators, and mixers. It can also be used in switching applications, such as in power supplies and motor control circuits.
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