MPSH10

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Mfr.Part #
MPSH10
Manufacturer
Central Semiconductor
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
RF TRANS NPNUHF/VHF
Stock
45,783
In Stock :
45,783

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Manufacturer :
Central Semiconductor
Product Category :
Transistors - Bipolar (BJT) - RF
Transition Frequency :
650MHz
hFE Min :
60
Power Dissipation :
350W
Collector-Base Capacitance-Max :
0.7pF
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Width :
4.191mm
Voltage - Rated DC :
25V
Number of Terminations :
3
Mounting Type :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 4mA 10V
ECCN Code :
EAR99
Transistor Type :
NPN
Base Part Number :
MPSH10
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Pbfree Code :
yes
Collector Emitter Saturation Voltage :
500mV
Element Configuration :
Single
Transistor Application :
AMPLIFIER
Lead Free :
Lead Free
Collector Emitter Voltage (VCEO) :
25V
Frequency :
650MHz
Packaging :
Bulk
Length :
5.1816mm
Polarity/Channel Type :
NPN
Radiation Hardening :
No
Surface Mount :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Emitter Base Voltage (VEBO) :
3V
Collector Emitter Breakdown Voltage :
25V
Number of Pins :
3
Transistor Element Material :
SILICON
Height :
5.334mm
Peak Reflow Temperature (Cel) :
260
Collector Base Voltage (VCBO) :
30V
Current Rating :
4mA
JESD-609 Code :
e1
Number of Elements :
1
Published :
2006
Operating Temperature :
-55°C~150°C TJ
Terminal Position :
BOTTOM
Pin Count :
3
Time@Peak Reflow Temperature-Max (s) :
40
Power - Max :
350mW
RoHS Status :
RoHS Compliant
Gain Bandwidth Product :
650MHz
Max Power Dissipation :
350W
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 2 days ago)
Datasheets
MPSH10
Introducing Transistors - Bipolar (BJT) - RF Central Semiconductor MPSH10 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Base Part Number:MPSH10, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Number of Pins:3, Operating Temperature:-55°C~150°C TJ, MPSH10 pinout, MPSH10 datasheet PDF, MPSH10 amp .Beyond Transistors - Bipolar (BJT) - RF Central Semiconductor MPSH10 ,we also offer BFP196WH6327XTSA1, BFR193E6327HTSA1, BFR360FH6327XTSA1, Our vast inventory has you covered. Contact us now for immediate solutions.



MPSH10G datasheet pdf and Transistors - Bipolar (BJT) - RF product details from ON Semiconductor stock available at

The ON Semiconductor MPSH10G is a NPN Bipolar Junction Transistor (BJT) designed for use in RF applications. It has a maximum collector-emitter voltage of 25V and is packaged in a 3-pin TO-92 box.

Features of the MPSH10G include a high current gain of up to 500, a low noise figure of 1.5dB, and a low collector-emitter saturation voltage of 0.2V. It also has a high frequency response of up to 500MHz and a low capacitance of 1.5pF.

The MPSH10G is suitable for use in a variety of RF applications, such as amplifiers, oscillators, and mixers. It can also be used in switching applications, such as in power supplies and motor control circuits.
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