MPSH17RLRAG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Emitter Base Voltage (VEBO) :

3V

Mount :

Through Hole

Terminal Position :

BOTTOM

Qualification Status :

Not Qualified

Collector Emitter Breakdown Voltage :

15V

JESD-609 Code :

e1

Transistor Element Material :

SILICON

Number of Elements :

1

Gain Bandwidth Product :

800MHz

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Collector-Base Capacitance-Max :

0.9pF

Collector Emitter Saturation Voltage :

500mV

Mounting Type :

Through Hole

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Element Configuration :

Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Lead Free :

Lead Free

Noise Figure (dB Typ @ f) :

6dB @ 200MHz

Peak Reflow Temperature (Cel) :

260

Power - Max :

350mW

Pbfree Code :

yes

Highest Frequency Band :

VERY HIGH FREQUENCY B

Pin Count :

3

Packaging :

Tape and Reel (TR)

HTS Code :

8541.21.00.75

Polarity/Channel Type :

NPN

Gain :

24dB

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 5mA 10V

RoHS Status :

RoHS Compliant

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Max Power Dissipation :

350mW

hFE Min :

25

Transition Frequency :

800MHz

Voltage - Rated DC :

15V

Collector Base Voltage (VCBO) :

20V

Collector Emitter Voltage (VCEO) :

15V

Base Part Number :

MPSH17

Published :

2006

Number of Terminations :

3

Transistor Type :

NPN

Transistor Application :

AMPLIFIER