MPSH17G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Mount :

Through Hole

Max Power Dissipation :

350mW

Transistor Element Material :

SILICON

Transition Frequency :

800MHz

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

BOTTOM

RoHS Status :

RoHS Compliant

Frequency :

800MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 5mA 10V

Collector Emitter Saturation Voltage :

500mV

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Bulk

Number of Terminations :

3

Polarity/Channel Type :

NPN

Qualification Status :

Not Qualified

Noise Figure (dB Typ @ f) :

6dB @ 200MHz

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

15V

Transistor Type :

NPN

Number of Elements :

1

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

Base Part Number :

MPSH17

Gain :

24dB

Pbfree Code :

yes

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Lead Free :

Lead Free

Mounting Type :

Through Hole

hFE Min :

25

Transistor Application :

AMPLIFIER

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Collector Emitter Breakdown Voltage :

15V

Gain Bandwidth Product :

800MHz

Published :

2006

Voltage - Rated DC :

15V

Collector Base Voltage (VCBO) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Collector-Base Capacitance-Max :

0.9pF

Power Dissipation :

350mW

Current Rating :

5mA

Emitter Base Voltage (VEBO) :

3V

JESD-609 Code :

e1

Lifecycle Status :

OBSOLETE (Last Updated: 1 week ago)