MJE5852G
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- Mfr.Part #
- MJE5852G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 400V 8A TO220
- Stock
- 37
- In Stock ：
- 37
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Current Rating :
- -8A
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 8A
- Package / Case :
- TO-220-3
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 400V
- Weight :
- 4.535924g
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 10.28mm
- Width :
- 4.82mm
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 6V
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 450V
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5 @ 5A 5V
- hFE Min :
- 15
- Height :
- 9.28mm
- Transistor Type :
- PNP
- Series :
- SWITCHMODE™
- Collector Emitter Saturation Voltage :
- 2V
- Base Part Number :
- MJE5852
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-220AB
- Collector Emitter Voltage (VCEO) :
- 400V
- Voltage - Rated DC :
- -400V
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 5V @ 3A, 8A
- Mounting Type :
- Through Hole
- Case Connection :
- COLLECTOR
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Published :
- 2004
- Radiation Hardening :
- No
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- Surface Mount :
- No
- Power Dissipation :
- 80W
- Factory Lead Time :
- 13 Weeks
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 80W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Datasheets
- MJE5852G
MJE5852G Documents
PNP -65°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
MJE5852G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 5 @ 5A 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 5V @ 3A, 8A.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is -8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.
MJE5852G Features
the DC current gain for this device is 5 @ 5A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 5V @ 3A, 8A
the emitter base voltage is kept at 6V
the current rating of this device is -8A
MJE5852G Applications
There are a lot of ON Semiconductor
MJE5852G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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