MJE5731
- Mfr.Part #
- MJE5731
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 350V 1A TO220
- Stock
- 15,189
- In Stock :
- 15,189
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Case Connection :
- COLLECTOR
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 1A
- Terminal Finish :
- Tin (Sn)
- Width :
- 4.82mm
- Surface Mount :
- No
- ECCN Code :
- EAR99
- Current Rating :
- -1A
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Height :
- 15.75mm
- Polarity/Channel Type :
- PNP
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 350V
- Weight :
- 4.535924g
- Length :
- 10.28mm
- Transition Frequency :
- 10MHz
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 300mA 10V
- Max Power Dissipation :
- 40W
- Factory Lead Time :
- 8 Weeks
- Mounting Type :
- Through Hole
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Pbfree Code :
- yes
- Transistor Type :
- PNP
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 1mA
- Pin Count :
- 3
- Gain Bandwidth Product :
- 10MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 1A
- hFE Min :
- 30
- Power Dissipation :
- 40W
- Collector Base Voltage (VCBO) :
- 350V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 350V
- Frequency :
- 10MHz
- Packaging :
- Tube
- Max Breakdown Voltage :
- 60V
- Collector Emitter Saturation Voltage :
- 1V
- Number of Terminations :
- 3
- Operating Temperature :
- -65°C~150°C TJ
- Voltage - Rated DC :
- -350V
- Radiation Hardening :
- No
- Published :
- 2006
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-220AB
- Package / Case :
- TO-220-3
- Datasheets
- MJE5731

PNP -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
MJE5731G Overview
This device has a DC current gain of 30 @ 300mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -1A.In this part, there is a transition frequency of 10MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is 1A volts.
MJE5731G Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 10MHz
MJE5731G Applications
There are a lot of ON Semiconductor
MJE5731G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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