MJE5731

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Mfr.Part #
MJE5731
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP 350V 1A TO220
Stock
15,189
In Stock :
15,189

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
REACH SVHC :
No SVHC
Transistor Application :
SWITCHING
Element Configuration :
Single
Case Connection :
COLLECTOR
Peak Reflow Temperature (Cel) :
260
Max Collector Current :
1A
Terminal Finish :
Tin (Sn)
Width :
4.82mm
Surface Mount :
No
ECCN Code :
EAR99
Current Rating :
-1A
Number of Pins :
3
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Height :
15.75mm
Polarity/Channel Type :
PNP
Lead Free :
Lead Free
Time@Peak Reflow Temperature-Max (s) :
40
Emitter Base Voltage (VEBO) :
5V
RoHS Status :
ROHS3 Compliant
Collector Emitter Voltage (VCEO) :
350V
Weight :
4.535924g
Length :
10.28mm
Transition Frequency :
10MHz
Number of Elements :
1
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 300mA 10V
Max Power Dissipation :
40W
Factory Lead Time :
8 Weeks
Mounting Type :
Through Hole
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
Pbfree Code :
yes
Transistor Type :
PNP
JESD-609 Code :
e3
Current - Collector Cutoff (Max) :
1mA
Pin Count :
3
Gain Bandwidth Product :
10MHz
Vce Saturation (Max) @ Ib, Ic :
1V @ 200mA, 1A
hFE Min :
30
Power Dissipation :
40W
Collector Base Voltage (VCBO) :
350V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Breakdown Voltage :
350V
Frequency :
10MHz
Packaging :
Tube
Max Breakdown Voltage :
60V
Collector Emitter Saturation Voltage :
1V
Number of Terminations :
3
Operating Temperature :
-65°C~150°C TJ
Voltage - Rated DC :
-350V
Radiation Hardening :
No
Published :
2006
Transistor Element Material :
SILICON
JEDEC-95 Code :
TO-220AB
Package / Case :
TO-220-3
Datasheets
MJE5731
Introducing Transistors - Bipolar (BJT) - Single onsemi MJE5731 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-65°C~150°C TJ, Package / Case:TO-220-3, MJE5731 pinout, MJE5731 datasheet PDF, MJE5731 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJE5731 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJE5731


PNP -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole

MJE5731G Overview


This device has a DC current gain of 30 @ 300mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -1A.In this part, there is a transition frequency of 10MHz.As a result, it can handle voltages as low as 60V volts.The maximum collector current is 1A volts.

MJE5731G Features


the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 10MHz


MJE5731G Applications


There are a lot of ON Semiconductor
MJE5731G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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