MJE5730
- Mfr.Part #
- MJE5730
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 300V 1A TO220
- Stock
- 2,739
- In Stock :
- 2,739
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Published :
- 2001
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Current Rating :
- -1A
- Emitter Base Voltage (VEBO) :
- 5V
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Collector Emitter Breakdown Voltage :
- 300V
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Factory Lead Time :
- 2 Weeks
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- Max Collector Current :
- 1A
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 1mA
- Collector Base Voltage (VCBO) :
- 300V
- Weight :
- 4.535924g
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- Gain Bandwidth Product :
- 10MHz
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 1A
- Radiation Hardening :
- No
- Transistor Type :
- PNP
- Transition Frequency :
- 10MHz
- Collector Emitter Saturation Voltage :
- 1V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 300mA 10V
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 3
- Power Dissipation :
- 40W
- Operating Temperature :
- -65°C~150°C TJ
- JEDEC-95 Code :
- TO-220AB
- hFE Min :
- 30
- Package / Case :
- TO-220-3
- Length :
- 6.35mm
- Frequency :
- 10MHz
- Collector Emitter Voltage (VCEO) :
- 300V
- Case Connection :
- COLLECTOR
- Height :
- 6.35mm
- Max Power Dissipation :
- 40W
- Width :
- 6.35mm
- Voltage - Rated DC :
- -300V
- Number of Terminations :
- 3
- Packaging :
- Tube
- Datasheets
- MJE5730

PNP -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
MJE5730G Overview
DC current gain in this device equals 30 @ 300mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 200mA, 1A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -1A current rating.As a result, the part has a transition frequency of 10MHz.In extreme cases, the collector current can be as low as 1A volts.
MJE5730G Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 10MHz
MJE5730G Applications
There are a lot of ON Semiconductor
MJE5730G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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