MJE5730

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current Rating :

-1A

Polarity/Channel Type :

PNP

Collector Base Voltage (VCBO) :

300V

JESD-609 Code :

e3

Pbfree Code :

yes

Transition Frequency :

10MHz

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Rated DC :

-300V

ECCN Code :

EAR99

Frequency :

10MHz

Published :

2001

Height :

6.35mm

Max Collector Current :

1A

Pin Count :

3

Length :

6.35mm

Emitter Base Voltage (VEBO) :

5V

Radiation Hardening :

No

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Gain Bandwidth Product :

10MHz

Collector Emitter Breakdown Voltage :

300V

Collector Emitter Saturation Voltage :

1V

Vce Saturation (Max) @ Ib, Ic :

1V @ 200mA, 1A

hFE Min :

30

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 300mA 10V

Packaging :

Tube

Mounting Type :

Through Hole

Collector Emitter Voltage (VCEO) :

300V

Factory Lead Time :

2 Weeks

Transistor Type :

PNP

Number of Terminations :

3

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Operating Temperature :

-65°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Peak Reflow Temperature (Cel) :

260

Case Connection :

COLLECTOR

Number of Elements :

1

Max Power Dissipation :

40W

Power Dissipation :

40W

JEDEC-95 Code :

TO-220AB

Width :

6.35mm

Weight :

4.535924g

Number of Pins :

3

Package / Case :

TO-220-3

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

1mA

Surface Mount :

No

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING