MJE5730

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Gain Bandwidth Product :

10MHz

Operating Temperature :

-65°C~150°C TJ

JEDEC-95 Code :

TO-220AB

Emitter Base Voltage (VEBO) :

5V

Vce Saturation (Max) @ Ib, Ic :

1V @ 200mA, 1A

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Radiation Hardening :

No

Lead Free :

Lead Free

Frequency :

10MHz

JESD-609 Code :

e3

Height :

6.35mm

hFE Min :

30

Case Connection :

COLLECTOR

Max Collector Current :

1A

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Collector Emitter Breakdown Voltage :

300V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Published :

2001

Number of Pins :

3

Collector Emitter Saturation Voltage :

1V

Voltage - Rated DC :

-300V

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-220-3

Pbfree Code :

yes

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 300mA 10V

REACH SVHC :

No SVHC

Mounting Type :

Through Hole

Transistor Type :

PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

40W

Max Power Dissipation :

40W

Number of Elements :

1

Weight :

4.535924g

Width :

6.35mm

Transistor Element Material :

SILICON

Packaging :

Tube

Length :

6.35mm

Transition Frequency :

10MHz

Polarity/Channel Type :

PNP

Collector Base Voltage (VCBO) :

300V

Collector Emitter Voltage (VCEO) :

300V

Surface Mount :

No

Peak Reflow Temperature (Cel) :

260

Current - Collector Cutoff (Max) :

1mA

Pin Count :

3

Current Rating :

-1A

Factory Lead Time :

2 Weeks

Element Configuration :

Single