MJE5730

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

300V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Gain Bandwidth Product :

10MHz

Mounting Type :

Through Hole

Transition Frequency :

10MHz

Max Collector Current :

1A

Power Dissipation :

40W

Operating Temperature :

-65°C~150°C TJ

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

30

Voltage - Rated DC :

-300V

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

1V @ 200mA, 1A

Transistor Element Material :

SILICON

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Height :

6.35mm

Transistor Type :

PNP

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Element Configuration :

Single

JEDEC-95 Code :

TO-220AB

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40

Max Power Dissipation :

40W

Transistor Application :

SWITCHING

Surface Mount :

No

Collector Emitter Saturation Voltage :

1V

Collector Base Voltage (VCBO) :

300V

Package / Case :

TO-220-3

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Factory Lead Time :

2 Weeks

Current Rating :

-1A

Polarity/Channel Type :

PNP

Pin Count :

3

Width :

6.35mm

Published :

2001

Weight :

4.535924g

Number of Terminations :

3

Number of Pins :

3

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

300V

Case Connection :

COLLECTOR

Emitter Base Voltage (VEBO) :

5V

Length :

6.35mm

Current - Collector Cutoff (Max) :

1mA

Frequency :

10MHz

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Packaging :

Tube

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 300mA 10V