MJE5731AG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

40W

Frequency :

10MHz

Width :

6.35mm

Collector Emitter Voltage (VCEO) :

375V

JEDEC-95 Code :

TO-220AB

Radiation Hardening :

No

Power - Max :

40W

Collector Emitter Breakdown Voltage :

375V

Polarity/Channel Type :

PNP

Published :

2004

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

350V

Power Dissipation :

2W

Emitter Base Voltage (VEBO) :

5V

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 300mA 10V

Case Connection :

COLLECTOR

Transistor Type :

PNP

Length :

6.35mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

1mA

hFE Min :

30

ECCN Code :

EAR99

Element Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

1V @ 200mA, 1A

Gain Bandwidth Product :

10MHz

Voltage - Rated DC :

-375V

Contact Plating :

Tin

Transistor Element Material :

SILICON

Number of Elements :

1

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Lifecycle Status :

ACTIVE (Last Updated: 13 hours ago)

Package / Case :

TO-220-3

Factory Lead Time :

8 Weeks

Max Collector Current :

1A

Packaging :

Tube

Number of Pins :

3

Surface Mount :

No

Weight :

4.535924g

Pin Count :

3

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Pbfree Code :

yes

Operating Temperature :

-65°C~150°C TJ

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Transition Frequency :

10MHz

Height :

6.35mm

Number of Terminations :

3

Current Rating :

-1A

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Through Hole