MJE5731AG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Emitter Base Voltage (VEBO) :

5V

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Radiation Hardening :

No

Frequency :

10MHz

Width :

6.35mm

Current Rating :

-1A

Number of Elements :

1

Current - Collector Cutoff (Max) :

1mA

REACH SVHC :

No SVHC

Gain Bandwidth Product :

10MHz

Contact Plating :

Tin

Pin Count :

3

Factory Lead Time :

8 Weeks

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 300mA 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Collector Emitter Breakdown Voltage :

375V

Published :

2004

Max Collector Current :

1A

Height :

6.35mm

Collector Base Voltage (VCBO) :

350V

Surface Mount :

No

Collector Emitter Voltage (VCEO) :

375V

Lead Free :

Lead Free

Pbfree Code :

yes

Power Dissipation :

2W

JESD-609 Code :

e3

Weight :

4.535924g

Packaging :

Tube

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Transition Frequency :

10MHz

Voltage - Rated DC :

-375V

Peak Reflow Temperature (Cel) :

260

Length :

6.35mm

Lifecycle Status :

ACTIVE (Last Updated: 13 hours ago)

Transistor Type :

PNP

Element Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

1V @ 200mA, 1A

RoHS Status :

ROHS3 Compliant

Power - Max :

40W

Number of Terminations :

3

Polarity/Channel Type :

PNP

Operating Temperature :

-65°C~150°C TJ

Max Power Dissipation :

40W

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

hFE Min :

30

Number of Pins :

3

Case Connection :

COLLECTOR