MJE5731G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation :

40W

Max Power Dissipation :

40W

hFE Min :

30

Packaging :

Tube

JEDEC-95 Code :

TO-220AB

Collector Emitter Voltage (VCEO) :

350V

Frequency :

10MHz

Transition Frequency :

10MHz

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Radiation Hardening :

No

JESD-609 Code :

e3

ECCN Code :

EAR99

Height :

15.75mm

Current - Collector Cutoff (Max) :

1mA

Voltage - Rated DC :

-350V

Number of Pins :

3

Surface Mount :

No

Width :

4.82mm

Collector Base Voltage (VCBO) :

350V

REACH SVHC :

No SVHC

Collector Emitter Breakdown Voltage :

350V

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 300mA 10V

Polarity/Channel Type :

PNP

Gain Bandwidth Product :

10MHz

Weight :

4.535924g

Transistor Type :

PNP

Max Breakdown Voltage :

60V

Factory Lead Time :

8 Weeks

Length :

10.28mm

Package / Case :

TO-220-3

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Max Collector Current :

1A

Vce Saturation (Max) @ Ib, Ic :

1V @ 200mA, 1A

Pbfree Code :

yes

Number of Elements :

1

Collector Emitter Saturation Voltage :

1V

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Case Connection :

COLLECTOR

Published :

2006

Terminal Finish :

Tin (Sn)

Operating Temperature :

-65°C~150°C TJ

Current Rating :

-1A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Element Configuration :

Single

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Emitter Base Voltage (VEBO) :

5V

Pin Count :

3

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)