MJE5742G

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Mfr.Part #
MJE5742G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 400V 8A TO220
Stock
6,591
In Stock :
6,591

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Pin Count :
3
Width :
4.826mm
Element Configuration :
Single
Polarity :
NPN
Transistor Element Material :
SILICON
Collector Emitter Voltage (VCEO) :
400V
Operating Temperature :
-65°C~150°C TJ
Lifecycle Status :
ACTIVE (Last Updated: 21 hours ago)
Number of Terminations :
3
Factory Lead Time :
8 Weeks
Collector Emitter Saturation Voltage :
2V
Number of Elements :
1
Voltage - Rated DC :
400V
Contact Plating :
Tin
Weight :
907.18474mg
Transistor Type :
NPN - Darlington
Peak Reflow Temperature (Cel) :
260
JESD-609 Code :
e3
Collector Emitter Breakdown Voltage :
400V
Surface Mount :
No
Mounting Type :
Through Hole
Package / Case :
TO-220-3
Length :
10.2616mm
Pbfree Code :
yes
REACH SVHC :
No SVHC
Lead Free :
Lead Free
Emitter Base Voltage (VEBO) :
8V
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 2A 5V
Power Dissipation :
2W
Vce Saturation (Max) @ Ib, Ic :
3V @ 400mA, 8A
Number of Pins :
3
JEDEC-95 Code :
TO-220AB
Height :
15.748mm
Continuous Collector Current :
8A
Current Rating :
8A
Max Power Dissipation :
2W
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
Max Collector Current :
8A
Radiation Hardening :
No
ECCN Code :
EAR99
Time@Peak Reflow Temperature-Max (s) :
40
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
COLLECTOR
Published :
2003
Packaging :
Tube
Introducing Transistors - Bipolar (BJT) - Single onsemi MJE5742G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Pins:3, MJE5742G pinout, MJE5742G datasheet PDF, MJE5742G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJE5742G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJE5742G


NPN - Darlington -65°C~150°C TJ 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

MJE5742G Overview


DC current gain in this device equals 200 @ 2A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 400mA, 8A.Single BJT transistor is essential to maintain the continuous collector voltage at 8A to achieve high efficiency.An emitter's base voltage can be kept at 8V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 8A current rating.In extreme cases, the collector current can be as low as 8A volts.

MJE5742G Features


the DC current gain for this device is 200 @ 2A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 400mA, 8A
the emitter base voltage is kept at 8V
the current rating of this device is 8A


MJE5742G Applications


There are a lot of ON Semiconductor
MJE5742G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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