MJE5742G

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Mfr.Part #
MJE5742G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 400V 8A TO220
Stock
6,591
In Stock :
6,591

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
JEDEC-95 Code :
TO-220AB
Mounting Type :
Through Hole
Pbfree Code :
yes
Collector Emitter Saturation Voltage :
2V
Contact Plating :
Tin
Number of Terminations :
3
RoHS Status :
ROHS3 Compliant
Radiation Hardening :
No
Surface Mount :
No
Number of Elements :
1
Length :
10.2616mm
Vce Saturation (Max) @ Ib, Ic :
3V @ 400mA, 8A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Breakdown Voltage :
400V
Voltage - Rated DC :
400V
Case Connection :
COLLECTOR
Weight :
907.18474mg
Transistor Type :
NPN - Darlington
Lead Free :
Lead Free
Max Power Dissipation :
2W
Collector Emitter Voltage (VCEO) :
400V
Polarity :
NPN
Transistor Application :
SWITCHING
Height :
15.748mm
Power Dissipation :
2W
Emitter Base Voltage (VEBO) :
8V
Lifecycle Status :
ACTIVE (Last Updated: 21 hours ago)
ECCN Code :
EAR99
Factory Lead Time :
8 Weeks
Operating Temperature :
-65°C~150°C TJ
JESD-609 Code :
e3
Transistor Element Material :
SILICON
Width :
4.826mm
Time@Peak Reflow Temperature-Max (s) :
40
Pin Count :
3
Published :
2003
Continuous Collector Current :
8A
REACH SVHC :
No SVHC
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 2A 5V
Peak Reflow Temperature (Cel) :
260
Number of Pins :
3
Packaging :
Tube
Max Collector Current :
8A
Element Configuration :
Single
Package / Case :
TO-220-3
Current Rating :
8A
Introducing Transistors - Bipolar (BJT) - Single onsemi MJE5742G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-65°C~150°C TJ, Number of Pins:3, Package / Case:TO-220-3, MJE5742G pinout, MJE5742G datasheet PDF, MJE5742G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJE5742G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJE5742G


NPN - Darlington -65°C~150°C TJ 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

MJE5742G Overview


DC current gain in this device equals 200 @ 2A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 400mA, 8A.Single BJT transistor is essential to maintain the continuous collector voltage at 8A to achieve high efficiency.An emitter's base voltage can be kept at 8V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 8A current rating.In extreme cases, the collector current can be as low as 8A volts.

MJE5742G Features


the DC current gain for this device is 200 @ 2A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 400mA, 8A
the emitter base voltage is kept at 8V
the current rating of this device is 8A


MJE5742G Applications


There are a lot of ON Semiconductor
MJE5742G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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