MJE5731A

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 300mA 10V

Width :

6.35mm

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Breakdown Voltage :

375V

Lifecycle Status :

ACTIVE (Last Updated: 13 hours ago)

REACH SVHC :

No SVHC

Packaging :

Tube

Number of Elements :

1

Surface Mount :

No

hFE Min :

30

Weight :

4.535924g

Number of Terminations :

3

Frequency :

10MHz

Power - Max :

40W

Time@Peak Reflow Temperature-Max (s) :

40

Current - Collector Cutoff (Max) :

1mA

Voltage - Rated DC :

-375V

Collector Base Voltage (VCBO) :

350V

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Vce Saturation (Max) @ Ib, Ic :

1V @ 200mA, 1A

Lead Free :

Lead Free

Published :

2004

Pbfree Code :

yes

Factory Lead Time :

8 Weeks

Power Dissipation :

2W

Transistor Application :

SWITCHING

Polarity/Channel Type :

PNP

Element Configuration :

Single

Package / Case :

TO-220-3

Height :

6.35mm

Max Power Dissipation :

40W

Gain Bandwidth Product :

10MHz

Radiation Hardening :

No

Contact Plating :

Tin

Current Rating :

-1A

Length :

6.35mm

Max Collector Current :

1A

Operating Temperature :

-65°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Transition Frequency :

10MHz

Case Connection :

COLLECTOR

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Transistor Type :

PNP

ECCN Code :

EAR99

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

375V