MJE5731A

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Time@Peak Reflow Temperature-Max (s) :

40

Polarity/Channel Type :

PNP

JESD-609 Code :

e3

Surface Mount :

No

Collector Emitter Voltage (VCEO) :

375V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain Bandwidth Product :

10MHz

Current Rating :

-1A

Contact Plating :

Tin

REACH SVHC :

No SVHC

Published :

2004

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 300mA 10V

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Vce Saturation (Max) @ Ib, Ic :

1V @ 200mA, 1A

hFE Min :

30

Current - Collector Cutoff (Max) :

1mA

Element Configuration :

Single

Frequency :

10MHz

Transistor Application :

SWITCHING

Number of Pins :

3

ECCN Code :

EAR99

Transition Frequency :

10MHz

Max Power Dissipation :

40W

Transistor Type :

PNP

Collector Base Voltage (VCBO) :

350V

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Width :

6.35mm

Number of Terminations :

3

Power Dissipation :

2W

Max Collector Current :

1A

Lifecycle Status :

ACTIVE (Last Updated: 13 hours ago)

Number of Elements :

1

Case Connection :

COLLECTOR

Power - Max :

40W

Packaging :

Tube

Voltage - Rated DC :

-375V

Pin Count :

3

Weight :

4.535924g

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

375V

Mounting Type :

Through Hole

Factory Lead Time :

8 Weeks

Transistor Element Material :

SILICON

Operating Temperature :

-65°C~150°C TJ

Package / Case :

TO-220-3

Radiation Hardening :

No

Length :

6.35mm

Height :

6.35mm

Pbfree Code :

yes

Emitter Base Voltage (VEBO) :

5V