MJE5850

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Mfr.Part #
MJE5850
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP 300V 8A TO220
Stock
7,457
In Stock :
7,457

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Breakdown Voltage :
300V
Length :
6.35mm
Time@Peak Reflow Temperature-Max (s) :
40
RoHS Status :
ROHS3 Compliant
Terminal Finish :
Tin (Sn)
Pbfree Code :
yes
Published :
2004
Packaging :
Tube
Factory Lead Time :
8 Weeks
Lead Free :
Lead Free
Transistor Application :
SWITCHING
Surface Mount :
No
Mounting Type :
Through Hole
Radiation Hardening :
No
Width :
6.35mm
Power Dissipation :
80W
Element Configuration :
Single
Package / Case :
TO-220-3
hFE Min :
15
Number of Terminations :
3
Voltage - Rated DC :
-300V
Series :
SWITCHMODE™
Transistor Element Material :
SILICON
Height :
6.35mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
COLLECTOR
JEDEC-95 Code :
TO-220AB
Max Power Dissipation :
80W
Number of Elements :
1
Collector Emitter Saturation Voltage :
2V
Operating Temperature :
-65°C~150°C TJ
ECCN Code :
EAR99
Max Collector Current :
8A
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
REACH SVHC :
No SVHC
Pin Count :
3
Emitter Base Voltage (VEBO) :
6V
Peak Reflow Temperature (Cel) :
260
JESD-609 Code :
e3
Collector Emitter Voltage (VCEO) :
300V
Collector Base Voltage (VCBO) :
350V
Transistor Type :
PNP
Weight :
4.535924g
Vce Saturation (Max) @ Ib, Ic :
5V @ 3A, 8A
Number of Pins :
3
Polarity/Channel Type :
PNP
Current Rating :
-8A
DC Current Gain (hFE) (Min) @ Ic, Vce :
5 @ 5A 5V
Datasheets
MJE5850
Introducing Transistors - Bipolar (BJT) - Single onsemi MJE5850 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Terminations:3, Operating Temperature:-65°C~150°C TJ, Number of Pins:3, MJE5850 pinout, MJE5850 datasheet PDF, MJE5850 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJE5850 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJE5850


PNP -65°C~150°C TJ 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole

MJE5850G Overview


DC current gain in this device equals 5 @ 5A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 5V @ 3A, 8A.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -8A current rating.In extreme cases, the collector current can be as low as 8A volts.

MJE5850G Features


the DC current gain for this device is 5 @ 5A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 5V @ 3A, 8A
the emitter base voltage is kept at 6V
the current rating of this device is -8A


MJE5850G Applications


There are a lot of ON Semiconductor
MJE5850G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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