MJE521G
- Mfr.Part #
- MJE521G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 4A TO126
- Stock
- 10,301
- In Stock :
- 10,301
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 4A
- JESD-30 Code :
- R-PSFM-T3
- Terminal Position :
- Single
- Power - Max :
- 40W
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-225AA, TO-126-3
- Packaging :
- Bulk
- Reach Compliance Code :
- Unknown
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 1A 1V
- Mounting Type :
- Through Hole
- Terminal Finish :
- MATTE TIN
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- No
- Number of Elements :
- 1
- Surface Mount :
- No
- Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 40V
- Operating Temperature :
- -65°C~150°C TJ
- Qualification Status :
- COMMERCIAL
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- MJE521G
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NPN -65°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
MJE521G Overview
DC current gain in this device equals 40 @ 1A 1V, which is the ratio of the base current to the collector current.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
MJE521G Features
the DC current gain for this device is 40 @ 1A 1V
MJE521G Applications
There are a lot of Rochester Electronics, LLC
MJE521G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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