MJE5850G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Lead Free :

Lead Free

ECCN Code :

EAR99

Collector Base Voltage (VCBO) :

350V

Factory Lead Time :

8 Weeks

Max Power Dissipation :

80W

Collector Emitter Voltage (VCEO) :

300V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Collector Emitter Breakdown Voltage :

300V

Vce Saturation (Max) @ Ib, Ic :

5V @ 3A, 8A

Polarity/Channel Type :

PNP

Series :

SWITCHMODE™

Max Collector Current :

8A

Power Dissipation :

80W

Emitter Base Voltage (VEBO) :

6V

Element Configuration :

Single

Number of Elements :

1

Voltage - Rated DC :

-300V

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Packaging :

Tube

Published :

2004

Number of Pins :

3

Height :

6.35mm

Length :

6.35mm

hFE Min :

15

Width :

6.35mm

Case Connection :

COLLECTOR

Transistor Element Material :

SILICON

Transistor Type :

PNP

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3

Operating Temperature :

-65°C~150°C TJ

Weight :

4.535924g

JEDEC-95 Code :

TO-220AB

Current Rating :

-8A

DC Current Gain (hFE) (Min) @ Ic, Vce :

5 @ 5A 5V

Pin Count :

3

Number of Terminations :

3

Mounting Type :

Through Hole

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Collector Emitter Saturation Voltage :

2V

Radiation Hardening :

No