MJE5850G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Base Voltage (VCBO) :

350V

Emitter Base Voltage (VEBO) :

6V

Surface Mount :

No

Pin Count :

3

Number of Pins :

3

Packaging :

Tube

Element Configuration :

Single

Length :

6.35mm

Published :

2004

Peak Reflow Temperature (Cel) :

260

Weight :

4.535924g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

COLLECTOR

Collector Emitter Breakdown Voltage :

300V

Package / Case :

TO-220-3

hFE Min :

15

Collector Emitter Voltage (VCEO) :

300V

Number of Terminations :

3

Vce Saturation (Max) @ Ib, Ic :

5V @ 3A, 8A

Mounting Type :

Through Hole

ECCN Code :

EAR99

Polarity/Channel Type :

PNP

Current Rating :

-8A

Voltage - Rated DC :

-300V

Factory Lead Time :

8 Weeks

Transistor Application :

SWITCHING

Collector Emitter Saturation Voltage :

2V

Number of Elements :

1

Max Power Dissipation :

80W

Power Dissipation :

80W

REACH SVHC :

No SVHC

Max Collector Current :

8A

Transistor Element Material :

SILICON

Radiation Hardening :

No

Transistor Type :

PNP

Width :

6.35mm

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Series :

SWITCHMODE™

Operating Temperature :

-65°C~150°C TJ

Height :

6.35mm

Lead Free :

Lead Free

JESD-609 Code :

e3

JEDEC-95 Code :

TO-220AB

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

5 @ 5A 5V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)