MJE5851
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- Mfr.Part #
- MJE5851
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 350V 8A TO220
- Stock
- 23,697
- In Stock ：
- 23,697
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tube
- RoHS Status :
- Non-RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 5V @ 3A, 8A
- Series :
- SWITCHMODE™
- Supplier Device Package :
- TO-220AB
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 350V
- Power - Max :
- 80W
- Package / Case :
- TO-220-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 8A
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5 @ 5A 5V
- Operating Temperature :
- -65°C~150°C TJ
- Datasheets
- MJE5851
PNP -65°C~150°C TJ TO-220-3 Tube Through Hole
MJE5851 Overview
This device has a DC current gain of 5 @ 5A 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-220AB.Detection of Collector Emitter Breakdown at 350V maximal voltage is present.
MJE5851 Features
the DC current gain for this device is 5 @ 5A 5V
the vce saturation(Max) is 5V @ 3A, 8A
the supplier device package of TO-220AB
MJE5851 Applications
There are a lot of Rochester Electronics, LLC
MJE5851 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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