MJE5742

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Mfr.Part #
MJE5742
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 400V 8A TO220
Stock
5,097
In Stock :
5,097

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Elements :
1
Collector Emitter Saturation Voltage :
2V
Mounting Type :
Through Hole
Height :
15.748mm
Transistor Type :
NPN - Darlington
Max Collector Current :
8A
REACH SVHC :
No SVHC
Weight :
907.18474mg
Package / Case :
TO-220-3
Radiation Hardening :
No
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 2A 5V
ECCN Code :
EAR99
Max Power Dissipation :
2W
Width :
4.826mm
Contact Plating :
Tin
Peak Reflow Temperature (Cel) :
260
Time@Peak Reflow Temperature-Max (s) :
40
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JEDEC-95 Code :
TO-220AB
Case Connection :
COLLECTOR
Collector Emitter Breakdown Voltage :
400V
Vce Saturation (Max) @ Ib, Ic :
3V @ 400mA, 8A
Element Configuration :
Single
Current Rating :
8A
Continuous Collector Current :
8A
Operating Temperature :
-65°C~150°C TJ
Transistor Application :
SWITCHING
Power Dissipation :
2W
Number of Pins :
3
Pin Count :
3
Lead Free :
Lead Free
RoHS Status :
ROHS3 Compliant
Pbfree Code :
yes
JESD-609 Code :
e3
Polarity :
NPN
Transistor Element Material :
SILICON
Published :
2003
Packaging :
Tube
Voltage - Rated DC :
400V
Factory Lead Time :
8 Weeks
Lifecycle Status :
ACTIVE (Last Updated: 21 hours ago)
Surface Mount :
No
Length :
10.2616mm
Collector Emitter Voltage (VCEO) :
400V
Number of Terminations :
3
Emitter Base Voltage (VEBO) :
8V
Datasheets
MJE5742
Introducing Transistors - Bipolar (BJT) - Single onsemi MJE5742 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Operating Temperature:-65°C~150°C TJ, Number of Pins:3, Number of Terminations:3, MJE5742 pinout, MJE5742 datasheet PDF, MJE5742 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJE5742 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJE5742


NPN - Darlington -65°C~150°C TJ 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

MJE5742G Overview


DC current gain in this device equals 200 @ 2A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 400mA, 8A.Single BJT transistor is essential to maintain the continuous collector voltage at 8A to achieve high efficiency.An emitter's base voltage can be kept at 8V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 8A current rating.In extreme cases, the collector current can be as low as 8A volts.

MJE5742G Features


the DC current gain for this device is 200 @ 2A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 400mA, 8A
the emitter base voltage is kept at 8V
the current rating of this device is 8A


MJE5742G Applications


There are a lot of ON Semiconductor
MJE5742G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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