MJE5742

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Mfr.Part #
MJE5742
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 400V 8A TO220
Stock
5,097
In Stock :
5,097

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Element Configuration :
Single
Collector Emitter Saturation Voltage :
2V
Vce Saturation (Max) @ Ib, Ic :
3V @ 400mA, 8A
Factory Lead Time :
8 Weeks
Length :
10.2616mm
Power Dissipation :
2W
Package / Case :
TO-220-3
Pbfree Code :
yes
ECCN Code :
EAR99
Transistor Type :
NPN - Darlington
Number of Elements :
1
Height :
15.748mm
Time@Peak Reflow Temperature-Max (s) :
40
JESD-609 Code :
e3
RoHS Status :
ROHS3 Compliant
Weight :
907.18474mg
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Number of Pins :
3
Lifecycle Status :
ACTIVE (Last Updated: 21 hours ago)
Operating Temperature :
-65°C~150°C TJ
Width :
4.826mm
Polarity :
NPN
Max Power Dissipation :
2W
Number of Terminations :
3
Contact Plating :
Tin
Collector Emitter Voltage (VCEO) :
400V
Emitter Base Voltage (VEBO) :
8V
Lead Free :
Lead Free
Case Connection :
COLLECTOR
Peak Reflow Temperature (Cel) :
260
Pin Count :
3
REACH SVHC :
No SVHC
Current Rating :
8A
Surface Mount :
No
Packaging :
Tube
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 2A 5V
Published :
2003
Max Collector Current :
8A
Voltage - Rated DC :
400V
Collector Emitter Breakdown Voltage :
400V
Mounting Type :
Through Hole
Continuous Collector Current :
8A
JEDEC-95 Code :
TO-220AB
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Radiation Hardening :
No
Introducing Transistors - Bipolar (BJT) - Single onsemi MJE5742 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Pins:3, Operating Temperature:-65°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, MJE5742 pinout, MJE5742 datasheet PDF, MJE5742 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJE5742 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJE5742


NPN - Darlington -65°C~150°C TJ 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

MJE5742G Overview


DC current gain in this device equals 200 @ 2A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 400mA, 8A.Single BJT transistor is essential to maintain the continuous collector voltage at 8A to achieve high efficiency.An emitter's base voltage can be kept at 8V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 8A current rating.In extreme cases, the collector current can be as low as 8A volts.

MJE5742G Features


the DC current gain for this device is 200 @ 2A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 400mA, 8A
the emitter base voltage is kept at 8V
the current rating of this device is 8A


MJE5742G Applications


There are a lot of ON Semiconductor
MJE5742G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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