MJE5742

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Mfr.Part #
MJE5742
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 400V 8A TO220
Stock
5,097
In Stock :
5,097

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Terminations :
3
Width :
4.826mm
Length :
10.2616mm
JEDEC-95 Code :
TO-220AB
Polarity :
NPN
JESD-609 Code :
e3
Vce Saturation (Max) @ Ib, Ic :
3V @ 400mA, 8A
Case Connection :
COLLECTOR
Contact Plating :
Tin
REACH SVHC :
No SVHC
Lead Free :
Lead Free
Continuous Collector Current :
8A
Current Rating :
8A
Radiation Hardening :
No
Packaging :
Tube
Time@Peak Reflow Temperature-Max (s) :
40
Collector Emitter Breakdown Voltage :
400V
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 2A 5V
Peak Reflow Temperature (Cel) :
260
Weight :
907.18474mg
Transistor Application :
SWITCHING
Published :
2003
RoHS Status :
ROHS3 Compliant
Voltage - Rated DC :
400V
Collector Emitter Saturation Voltage :
2V
Surface Mount :
No
Transistor Type :
NPN - Darlington
Number of Pins :
3
Transistor Element Material :
SILICON
Lifecycle Status :
ACTIVE (Last Updated: 21 hours ago)
Emitter Base Voltage (VEBO) :
8V
Element Configuration :
Single
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
3
Operating Temperature :
-65°C~150°C TJ
Max Collector Current :
8A
ECCN Code :
EAR99
Power Dissipation :
2W
Collector Emitter Voltage (VCEO) :
400V
Factory Lead Time :
8 Weeks
Number of Elements :
1
Package / Case :
TO-220-3
Height :
15.748mm
Pbfree Code :
yes
Max Power Dissipation :
2W
Introducing Transistors - Bipolar (BJT) - Single onsemi MJE5742 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-65°C~150°C TJ, Package / Case:TO-220-3, MJE5742 pinout, MJE5742 datasheet PDF, MJE5742 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJE5742 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJE5742


NPN - Darlington -65°C~150°C TJ 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

MJE5742G Overview


DC current gain in this device equals 200 @ 2A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 400mA, 8A.Single BJT transistor is essential to maintain the continuous collector voltage at 8A to achieve high efficiency.An emitter's base voltage can be kept at 8V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 8A current rating.In extreme cases, the collector current can be as low as 8A volts.

MJE5742G Features


the DC current gain for this device is 200 @ 2A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 400mA, 8A
the emitter base voltage is kept at 8V
the current rating of this device is 8A


MJE5742G Applications


There are a lot of ON Semiconductor
MJE5742G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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