MJE5742
- Mfr.Part #
- MJE5742
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 400V 8A TO220
- Stock
- 5,097
- In Stock :
- 5,097
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 2V
- Mounting Type :
- Through Hole
- Height :
- 15.748mm
- Transistor Type :
- NPN - Darlington
- Max Collector Current :
- 8A
- REACH SVHC :
- No SVHC
- Weight :
- 907.18474mg
- Package / Case :
- TO-220-3
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2A 5V
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 2W
- Width :
- 4.826mm
- Contact Plating :
- Tin
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- TO-220AB
- Case Connection :
- COLLECTOR
- Collector Emitter Breakdown Voltage :
- 400V
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 400mA, 8A
- Element Configuration :
- Single
- Current Rating :
- 8A
- Continuous Collector Current :
- 8A
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 2W
- Number of Pins :
- 3
- Pin Count :
- 3
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Polarity :
- NPN
- Transistor Element Material :
- SILICON
- Published :
- 2003
- Packaging :
- Tube
- Voltage - Rated DC :
- 400V
- Factory Lead Time :
- 8 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 21 hours ago)
- Surface Mount :
- No
- Length :
- 10.2616mm
- Collector Emitter Voltage (VCEO) :
- 400V
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 8V
- Datasheets
- MJE5742

NPN - Darlington -65°C~150°C TJ 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
MJE5742G Overview
DC current gain in this device equals 200 @ 2A 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 400mA, 8A.Single BJT transistor is essential to maintain the continuous collector voltage at 8A to achieve high efficiency.An emitter's base voltage can be kept at 8V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 8A current rating.In extreme cases, the collector current can be as low as 8A volts.
MJE5742G Features
the DC current gain for this device is 200 @ 2A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 400mA, 8A
the emitter base voltage is kept at 8V
the current rating of this device is 8A
MJE5742G Applications
There are a lot of ON Semiconductor
MJE5742G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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