MJD2955T4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Base Voltage (VCBO) :

70V

Transistor Application :

AMPLIFIER

hFE Min :

20

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Weight :

4.535924g

Number of Pins :

3

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4A 4V

Factory Lead Time :

22 Weeks

Max Breakdown Voltage :

60V

Collector Emitter Saturation Voltage :

1.1V

Number of Terminations :

2

Vce Saturation (Max) @ Ib, Ic :

8V @ 3.3A, 10A

Collector Emitter Breakdown Voltage :

60V

Terminal Form :

Gull wing

Gain Bandwidth Product :

2MHz

Transistor Type :

PNP

Lead Free :

Lead Free

Max Power Dissipation :

1.75W

Element Configuration :

Single

Voltage - Rated DC :

-60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

20W

Pbfree Code :

yes

Case Connection :

COLLECTOR

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Emitter Base Voltage (VEBO) :

5V

Time@Peak Reflow Temperature-Max (s) :

40

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Length :

6.73mm

Radiation Hardening :

No

Current Rating :

-10A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Width :

6.22mm

ECCN Code :

EAR99

Max Collector Current :

10A

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

50μA

Contact Plating :

Tin

Surface Mount :

yes

Max Junction Temperature (Tj) :

150°C

Polarity/Channel Type :

PNP

Frequency :

2MHz

Pin Count :

3

Transition Frequency :

2MHz

REACH SVHC :

No SVHC

Height :

2.38mm

Collector Emitter Voltage (VCEO) :

60V

Base Part Number :

MJD2955

Published :

2002