MJD210RLG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

12.5W

Collector Emitter Breakdown Voltage :

40V

Current Rating :

-5A

Terminal Form :

Gull wing

Frequency :

65MHz

Power Dissipation :

1.4W

Element Configuration :

Single

Pin Count :

3

Number of Elements :

1

Factory Lead Time :

8 Weeks

Length :

6.73mm

Number of Terminations :

2

Emitter Base Voltage (VEBO) :

8V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Contact Plating :

Tin

REACH SVHC :

No SVHC

Case Connection :

COLLECTOR

Gain Bandwidth Product :

65MHz

Polarity :

PNP, NPN

Height :

2.38mm

Collector Base Voltage (VCBO) :

40V

Radiation Hardening :

No

ECCN Code :

EAR99

JESD-609 Code :

e3

Surface Mount :

yes

Max Breakdown Voltage :

25V

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

25V

Current - Collector Cutoff (Max) :

100nA ICBO

Transistor Application :

AMPLIFIER

Transistor Type :

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

45 @ 2A 1V

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

65MHz

Vce Saturation (Max) @ Ib, Ic :

1.8V @ 1A, 5A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Published :

2005

Base Part Number :

MJD210

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

1.8V

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

40

Max Collector Current :

5A

Operating Temperature :

-65°C~150°C TJ

Width :

6.22mm

hFE Min :

70

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

-25V