MJD200RLG
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- Mfr.Part #
- MJD200RLG
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 25V 5A DPAK
- Stock
- 10,334
- In Stock ：
- 10,334
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 25V
- Collector Base Voltage (VCBO) :
- 40V
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 5A
- Base Part Number :
- MJD200
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- JESD-30 Code :
- R-PSSO-G2
- Published :
- 2006
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Transistor Application :
- AMPLIFIER
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 45 @ 2A 1V
- Frequency :
- 65MHz
- Peak Reflow Temperature (Cel) :
- 260
- Surface Mount :
- yes
- Lead Free :
- Lead Free
- Case Connection :
- COLLECTOR
- Transition Frequency :
- 65MHz
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 1.8V
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1A, 5A
- Emitter Base Voltage (VEBO) :
- 8V
- Gain Bandwidth Product :
- 65MHz
- Terminal Form :
- Gull wing
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Factory Lead Time :
- 8 Weeks
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Current Rating :
- 5A
- Max Power Dissipation :
- 1.4W
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Voltage - Rated DC :
- 25V
- hFE Min :
- 70
- Max Breakdown Voltage :
- 25V
- Collector Emitter Voltage (VCEO) :
- 25V
- Pin Count :
- 3
- Number of Terminations :
- 2
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Contact Plating :
- Tin
- Power Dissipation :
- 1.4W
- Operating Temperature :
- -65°C~150°C TJ
- Datasheets
- MJD200RLG
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD200RLG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 45 @ 2A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.8V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.8V @ 1A, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 8V.Its current rating is 5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 65MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 5A volts.
MJD200RLG Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is 5A
a transition frequency of 65MHz
MJD200RLG Applications
There are a lot of ON Semiconductor
MJD200RLG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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