MJD210RL

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

REACH SVHC :

No SVHC

Surface Mount :

yes

Height :

2.38mm

Emitter Base Voltage (VEBO) :

8V

Voltage - Rated DC :

-25V

Vce Saturation (Max) @ Ib, Ic :

1.8V @ 1A, 5A

Max Power Dissipation :

12.5W

hFE Min :

70

Collector Emitter Breakdown Voltage :

40V

Collector Base Voltage (VCBO) :

40V

JESD-30 Code :

R-PSSO-G2

Contact Plating :

Tin

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Operating Temperature :

-65°C~150°C TJ

ECCN Code :

EAR99

Transistor Type :

PNP

Current - Collector Cutoff (Max) :

100nA ICBO

Number of Terminations :

2

Length :

6.73mm

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Polarity :

PNP, NPN

Pin Count :

3

Transistor Application :

AMPLIFIER

Published :

2005

Lead Free :

Lead Free

Factory Lead Time :

8 Weeks

Transition Frequency :

65MHz

Base Part Number :

MJD210

Frequency :

65MHz

Collector Emitter Saturation Voltage :

1.8V

Radiation Hardening :

No

Terminal Form :

Gull wing

Case Connection :

COLLECTOR

Power Dissipation :

1.4W

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Pbfree Code :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gain Bandwidth Product :

65MHz

Element Configuration :

Single

Max Collector Current :

5A

Current Rating :

-5A

DC Current Gain (hFE) (Min) @ Ic, Vce :

45 @ 2A 1V

Max Breakdown Voltage :

25V

Number of Pins :

3

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

25V

Time@Peak Reflow Temperature-Max (s) :

40

Width :

6.22mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)