MJD210T4

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Voltage (VCEO) :

25V

Peak Reflow Temperature (Cel) :

260

Width :

6.22mm

Factory Lead Time :

8 Weeks

Max Collector Current :

5A

Power Dissipation :

1.4W

REACH SVHC :

No SVHC

Pin Count :

3

Polarity/Channel Type :

PNP

Lead Free :

Lead Free

Radiation Hardening :

No

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

25V

Transistor Application :

AMPLIFIER

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

45 @ 2A 1V

Transistor Type :

PNP

JESD-30 Code :

R-PSSO-G2

hFE Min :

70

Published :

2006

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Collector Emitter Saturation Voltage :

1.8V

Number of Pins :

3

Max Power Dissipation :

1.4W

Collector Base Voltage (VCBO) :

40V

Time@Peak Reflow Temperature-Max (s) :

40

Transition Frequency :

65MHz

Current - Collector Cutoff (Max) :

100nA ICBO

Current Rating :

-5A

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

1.8V @ 1A, 5A

Length :

6.73mm

Terminal Form :

Gull wing

Base Part Number :

MJD210

Emitter Base Voltage (VEBO) :

8V

Height :

2.38mm

Contact Plating :

Tin

Voltage - Rated DC :

-25V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Surface Mount :

yes

Number of Elements :

1

Max Breakdown Voltage :

25V

Frequency :

65MHz

Packaging :

Tape and Reel (TR)

Gain Bandwidth Product :

65MHz

Case Connection :

COLLECTOR

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Number of Terminations :

2

Operating Temperature :

-65°C~150°C TJ