MJD200T4G

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Mfr.Part #
MJD200T4G
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS NPN 25V 5A DPAK
Stock
645
In Stock :
645

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Application :
AMPLIFIER
Operating Temperature :
-65°C~150°C TJ
Current Rating :
5A
Max Collector Current :
5A
Element Configuration :
Single
Collector Emitter Voltage (VCEO) :
25V
Power Dissipation :
1.4W
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
Polarity/Channel Type :
NPN
Max Power Dissipation :
12.5W
DC Current Gain (hFE) (Min) @ Ic, Vce :
45 @ 2A 1V
Time@Peak Reflow Temperature-Max (s) :
40
Gain Bandwidth Product :
65MHz
Pbfree Code :
yes
Peak Reflow Temperature (Cel) :
260
Max Breakdown Voltage :
25V
Number of Pins :
3
Number of Elements :
1
Surface Mount :
yes
Voltage - Rated DC :
25V
Number of Terminations :
2
Transistor Type :
NPN
Mounting Type :
Surface Mount
RoHS Status :
ROHS3 Compliant
Pin Count :
3
Packaging :
Tape and Reel (TR)
Terminal Form :
Gull wing
Collector Emitter Breakdown Voltage :
25V
JESD-30 Code :
R-PSSO-G2
Radiation Hardening :
No
Contact Plating :
Tin
Transition Frequency :
65MHz
Current - Collector Cutoff (Max) :
100nA ICBO
Factory Lead Time :
5 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Published :
2006
REACH SVHC :
No SVHC
Lead Free :
Lead Free
Case Connection :
COLLECTOR
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material :
SILICON
hFE Min :
70
Frequency :
65MHz
Collector Base Voltage (VCBO) :
40V
Emitter Base Voltage (VEBO) :
8V
Collector Emitter Saturation Voltage :
1.8V
JESD-609 Code :
e3
ECCN Code :
EAR99
Vce Saturation (Max) @ Ib, Ic :
1.8V @ 1A, 5A
Base Part Number :
MJD200
Datasheets
MJD200T4G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJD200T4G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Number of Pins:3, Number of Terminations:2, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Base Part Number:MJD200, MJD200T4G pinout, MJD200T4G datasheet PDF, MJD200T4G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJD200T4G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJD200T4G


NPN -65°C~150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

MJD200T4G Overview


In this device, the DC current gain is 45 @ 2A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.8V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.8V @ 1A, 5A.With the emitter base voltage set at 8V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 65MHz.Input voltage breakdown is available at 25V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.

MJD200T4G Features


the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is 5A
a transition frequency of 65MHz


MJD200T4G Applications


There are a lot of ON Semiconductor
MJD200T4G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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