MJD200T4G
- Mfr.Part #
- MJD200T4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 25V 5A DPAK
- Stock
- 645
- In Stock :
- 645
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- AMPLIFIER
- Operating Temperature :
- -65°C~150°C TJ
- Current Rating :
- 5A
- Max Collector Current :
- 5A
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 25V
- Power Dissipation :
- 1.4W
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 12.5W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 45 @ 2A 1V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 65MHz
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 25V
- Number of Pins :
- 3
- Number of Elements :
- 1
- Surface Mount :
- yes
- Voltage - Rated DC :
- 25V
- Number of Terminations :
- 2
- Transistor Type :
- NPN
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 25V
- JESD-30 Code :
- R-PSSO-G2
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Transition Frequency :
- 65MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Factory Lead Time :
- 5 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2006
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Element Material :
- SILICON
- hFE Min :
- 70
- Frequency :
- 65MHz
- Collector Base Voltage (VCBO) :
- 40V
- Emitter Base Voltage (VEBO) :
- 8V
- Collector Emitter Saturation Voltage :
- 1.8V
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1A, 5A
- Base Part Number :
- MJD200
- Datasheets
- MJD200T4G

NPN -65°C~150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD200T4G Overview
In this device, the DC current gain is 45 @ 2A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.8V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.8V @ 1A, 5A.With the emitter base voltage set at 8V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 65MHz.Input voltage breakdown is available at 25V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
MJD200T4G Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is 5A
a transition frequency of 65MHz
MJD200T4G Applications
There are a lot of ON Semiconductor
MJD200T4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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