MJD210TF
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- Mfr.Part #
- MJD210TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 25V 5A DPAK
- Stock
- 12,407
- In Stock ：
- 12,407
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Number of Elements :
- 1
- Element Configuration :
- Single
- Factory Lead Time :
- 6 Weeks
- Emitter Base Voltage (VEBO) :
- -8V
- Weight :
- 260.37mg
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- Frequency :
- 65MHz
- JESD-30 Code :
- R-PSSO-G2
- Gain Bandwidth Product :
- 65MHz
- Power Dissipation :
- 1.4W
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 1.4W
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Collector Emitter Breakdown Voltage :
- 25V
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1A, 5A
- Voltage - Rated DC :
- -40V
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 45 @ 2A 1V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- -40V
- Transition Frequency :
- 65MHz
- Number of Terminations :
- 2
- Base Part Number :
- MJD210
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Published :
- 2014
- Max Breakdown Voltage :
- 25V
- Max Collector Current :
- 5A
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lead Free :
- Lead Free
- Current Rating :
- -5A
- hFE Min :
- 45
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 25V
- Datasheets
- MJD210TF
MJD210TF Documents
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PNP 150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD210TF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 45 @ 2A 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.8V @ 1A, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -8V.Its current rating is -5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 65MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 5A volts.
MJD210TF Features
the DC current gain for this device is 45 @ 2A 1V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at -8V
the current rating of this device is -5A
a transition frequency of 65MHz
MJD210TF Applications
There are a lot of ON Semiconductor
MJD210TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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