MJD200
- Mfr.Part #
- MJD200
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 25V 5A DPAK
- Stock
- 4,229
- In Stock :
- 4,229
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transition Frequency :
- 65MHz
- Pbfree Code :
- No
- Max Power Dissipation :
- 1.4W
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Qualification Status :
- Not Qualified
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 1.8V
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- 40V
- hFE Min :
- 70
- Max Collector Current :
- 5A
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1A, 5A
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Collector Emitter Voltage (VCEO) :
- 25V
- Published :
- 2006
- Number of Terminations :
- 2
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -65°C~150°C TJ
- Base Part Number :
- MJD200
- JESD-30 Code :
- R-PSSO-G2
- Packaging :
- Tube
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 240
- Transistor Application :
- AMPLIFIER
- Emitter Base Voltage (VEBO) :
- 8V
- Reach Compliance Code :
- not_compliant
- Lead Free :
- Contains Lead
- HTS Code :
- 8541.29.00.95
- Current Rating :
- 5A
- Number of Elements :
- 1
- Pin Count :
- 3
- Mount :
- Surface Mount
- Case Connection :
- COLLECTOR
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 45 @ 2A 1V
- Gain Bandwidth Product :
- 65MHz
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 25V
- Voltage - Rated DC :
- 25V
- JESD-609 Code :
- e0
- RoHS Status :
- Non-RoHS Compliant
- Transistor Type :
- NPN
- Datasheets
- MJD200

NPN -65°C~150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tube Surface Mount
MJD200 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 45 @ 2A 1V.The collector emitter saturation voltage is 1.8V, which allows for maximum design flexibility.When VCE saturation is 1.8V @ 1A, 5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 8V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 5A.In the part, the transition frequency is 65MHz.A maximum collector current of 5A volts can be achieved.
MJD200 Features
the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is 5A
a transition frequency of 65MHz
MJD200 Applications
There are a lot of ON Semiconductor
MJD200 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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