MJD210TF
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- Mfr.Part #
- MJD210TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 25V 5A DPAK
- Stock
- 4,000
- In Stock ：
- 4,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 25V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- hFE Min :
- 45
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Pbfree Code :
- yes
- Weight :
- 260.37mg
- Power Dissipation :
- 1.4W
- Base Part Number :
- MJD210
- Number of Pins :
- 3
- Voltage - Rated DC :
- -40V
- Lead Free :
- Lead Free
- Frequency :
- 65MHz
- Number of Elements :
- 1
- Number of Terminations :
- 2
- Gain Bandwidth Product :
- 65MHz
- Collector Emitter Breakdown Voltage :
- 25V
- Packaging :
- Tape and Reel (TR)
- JESD-30 Code :
- R-PSSO-G2
- ECCN Code :
- EAR99
- Transistor Type :
- PNP
- Max Collector Current :
- 5A
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1A, 5A
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 65MHz
- Published :
- 2014
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Factory Lead Time :
- 6 Weeks
- Emitter Base Voltage (VEBO) :
- -8V
- Current Rating :
- -5A
- Element Configuration :
- Single
- Max Power Dissipation :
- 1.4W
- Collector Emitter Voltage (VCEO) :
- 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 45 @ 2A 1V
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- -40V
- Datasheets
- MJD210TF
PNP 150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD210TF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 45 @ 2A 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.8V @ 1A, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -8V.Its current rating is -5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 65MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 5A volts.
MJD210TF Features
the DC current gain for this device is 45 @ 2A 1V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at -8V
the current rating of this device is -5A
a transition frequency of 65MHz
MJD210TF Applications
There are a lot of ON Semiconductor
MJD210TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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