MJD200G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Radiation Hardening :

No

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Collector Emitter Saturation Voltage :

1.8V

Factory Lead Time :

2 Weeks

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

2

JESD-609 Code :

e3

Current - Collector Cutoff (Max) :

100nA ICBO

ECCN Code :

EAR99

Width :

6.22mm

Operating Temperature :

-65°C~150°C TJ

hFE Min :

70

Case Connection :

COLLECTOR

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

1.8V @ 1A, 5A

Surface Mount :

yes

REACH SVHC :

No SVHC

Voltage - Rated DC :

25V

Transistor Element Material :

SILICON

Published :

2006

Collector Emitter Breakdown Voltage :

25V

Transition Frequency :

65MHz

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Height :

2.38mm

Collector Emitter Voltage (VCEO) :

25V

Frequency :

65MHz

Gain Bandwidth Product :

65MHz

Base Part Number :

MJD200

Packaging :

Tube

Max Collector Current :

5A

Transistor Application :

AMPLIFIER

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Max Power Dissipation :

1.4W

Mounting Type :

Surface Mount

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 17 hours ago)

Number of Pins :

3

Power Dissipation :

1.4W

Number of Elements :

1

Lead Free :

Lead Free

Terminal Form :

Gull wing

Emitter Base Voltage (VEBO) :

8V

Collector Base Voltage (VCBO) :

40V

Length :

6.73mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

45 @ 2A 1V

Polarity/Channel Type :

NPN

Current Rating :

5A