MJD200T4

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Mfr.Part #
MJD200T4
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS PWR NPN 5A 25V DPAK
Stock
1,348
In Stock :
1,348

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Base Voltage (VCBO) :
40V
Gain Bandwidth Product :
65MHz
Operating Temperature :
-65°C~150°C TJ
Terminal Form :
Gull wing
JESD-609 Code :
e3
DC Current Gain (hFE) (Min) @ Ic, Vce :
45 @ 2A 1V
ECCN Code :
EAR99
Emitter Base Voltage (VEBO) :
8V
JESD-30 Code :
R-PSSO-G2
Element Configuration :
Single
Mounting Type :
Surface Mount
Current Rating :
5A
Lead Free :
Lead Free
Max Collector Current :
5A
Frequency :
65MHz
Power Dissipation :
1.4W
Max Breakdown Voltage :
25V
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
AMPLIFIER
Surface Mount :
yes
REACH SVHC :
No SVHC
hFE Min :
70
Vce Saturation (Max) @ Ib, Ic :
1.8V @ 1A, 5A
Peak Reflow Temperature (Cel) :
260
Factory Lead Time :
5 Weeks
Contact Plating :
Tin
Base Part Number :
MJD200
Radiation Hardening :
No
Polarity/Channel Type :
NPN
Voltage - Rated DC :
25V
Number of Terminations :
2
Max Power Dissipation :
12.5W
Published :
2006
Time@Peak Reflow Temperature-Max (s) :
40
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
Pbfree Code :
yes
Collector Emitter Breakdown Voltage :
25V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Type :
NPN
Packaging :
Tape and Reel (TR)
Pin Count :
3
Case Connection :
COLLECTOR
Number of Pins :
3
Transition Frequency :
65MHz
Collector Emitter Saturation Voltage :
1.8V
Current - Collector Cutoff (Max) :
100nA ICBO
Collector Emitter Voltage (VCEO) :
25V
Datasheets
MJD200T4
Introducing Transistors - Bipolar (BJT) - Single onsemi MJD200T4 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Mounting Type:Surface Mount, Base Part Number:MJD200, Number of Terminations:2, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Pins:3, MJD200T4 pinout, MJD200T4 datasheet PDF, MJD200T4 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJD200T4 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJD200T4


NPN -65°C~150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

MJD200T4G Overview


In this device, the DC current gain is 45 @ 2A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.8V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.8V @ 1A, 5A.With the emitter base voltage set at 8V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 65MHz.Input voltage breakdown is available at 25V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.

MJD200T4G Features


the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is 5A
a transition frequency of 65MHz


MJD200T4G Applications


There are a lot of ON Semiconductor
MJD200T4G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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