MJD2955G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Length :

6.7056mm

Vce Saturation (Max) @ Ib, Ic :

8V @ 3.3A, 10A

Pbfree Code :

yes

Number of Pins :

3

Factory Lead Time :

8 Weeks

Height :

2.3876mm

Transistor Type :

PNP

Transistor Element Material :

SILICON

Radiation Hardening :

No

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Terminal Finish :

Tin (Sn)

Current Rating :

-10A

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Saturation Voltage :

1.1V

Frequency :

2MHz

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

60V

Polarity/Channel Type :

PNP

Collector Emitter Voltage (VCEO) :

60V

Operating Temperature :

-55°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 4A 4V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Surface Mount :

yes

Gain Bandwidth Product :

2MHz

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Case Connection :

COLLECTOR

hFE Min :

20

JESD-609 Code :

e3

Collector Base Voltage (VCBO) :

70V

Transistor Application :

AMPLIFIER

Power Dissipation :

1.75W

Voltage - Rated DC :

-60V

Current - Collector Cutoff (Max) :

50μA

Base Part Number :

MJD2955

Number of Terminations :

2

Max Collector Current :

10A

Packaging :

Tube

ECCN Code :

EAR99

Pin Count :

3

Published :

2002

Transition Frequency :

2MHz

Lead Free :

Lead Free

Width :

6.223mm

Max Power Dissipation :

1.75W

REACH SVHC :

No SVHC