MJD243T4G
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- Mfr.Part #
- MJD243T4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 100V 4A DPAK
- Stock
- 12,686
- In Stock ：
- 12,686
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Published :
- 2005
- Length :
- 6.73mm
- Base Part Number :
- MJD243
- Max Collector Current :
- 4A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 200mA 1V
- Terminal Form :
- Gull wing
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 40MHz
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 100V
- Width :
- 6.22mm
- Halogen Free :
- Halogen Free
- Emitter Base Voltage (VEBO) :
- 7V
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Current Rating :
- 4A
- Height :
- 2.38mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- hFE Min :
- 40
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Number of Terminations :
- 2
- Case Connection :
- COLLECTOR
- Gain Bandwidth Product :
- 40MHz
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 100V
- Max Breakdown Voltage :
- 100V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Saturation Voltage :
- 600mV
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Pbfree Code :
- yes
- Transition Frequency :
- 40MHz
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Element Configuration :
- Single
- Power Dissipation :
- 1.4W
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Contact Plating :
- Tin
- Voltage - Rated DC :
- 100V
- JESD-30 Code :
- R-PSSO-G2
- Max Power Dissipation :
- 12.5W
- Factory Lead Time :
- 8 Weeks
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 100V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins :
- 3
- Datasheets
- MJD243T4G
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD243T4G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 200mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 600mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 100mA, 1A.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is 4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 40MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
MJD243T4G Features
the DC current gain for this device is 40 @ 200mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the current rating of this device is 4A
a transition frequency of 40MHz
MJD243T4G Applications
There are a lot of ON Semiconductor
MJD243T4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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