MJD243T4

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

4A

Lead Free :

Lead Free

Length :

6.73mm

Terminal Form :

Gull wing

Width :

6.22mm

Radiation Hardening :

No

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Transistor Type :

NPN

Max Power Dissipation :

12.5W

Mounting Type :

Surface Mount

Power Dissipation :

1.4W

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

100nA ICBO

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

7V

Collector Base Voltage (VCBO) :

100V

Vce Saturation (Max) @ Ib, Ic :

600mV @ 100mA, 1A

Collector Emitter Breakdown Voltage :

100V

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 200mA 1V

Transistor Application :

AMPLIFIER

Height :

2.38mm

Collector Emitter Saturation Voltage :

600mV

Number of Elements :

1

Contact Plating :

Tin

Transition Frequency :

40MHz

Polarity/Channel Type :

NPN

Collector Emitter Voltage (VCEO) :

100V

Element Configuration :

Single

Pin Count :

3

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Operating Temperature :

-65°C~150°C TJ

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Current Rating :

4A

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

40

Halogen Free :

Halogen Free

Frequency :

40MHz

Surface Mount :

yes

hFE Min :

40

Published :

2005

Base Part Number :

MJD243

Gain Bandwidth Product :

40MHz

Case Connection :

COLLECTOR

Voltage - Rated DC :

100V

Pbfree Code :

yes

Number of Pins :

3

Max Breakdown Voltage :

100V

Factory Lead Time :

8 Weeks